Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma

2017 ◽  
Vol 624 ◽  
pp. 49-53 ◽  
Author(s):  
Yuki Ishii ◽  
Tetsuya Kaneko ◽  
Kunio Okimura ◽  
Haruo Shindo ◽  
Masao Isomura
2009 ◽  
Vol 289-292 ◽  
pp. 697-703 ◽  
Author(s):  
Erwin Hüger ◽  
Jochen Stahn ◽  
Udo Geckle ◽  
Michael Bruns ◽  
Harald Schmidt

Studies of self-diffusion in solids are presented, which are based on neutron reflectometry. For the application of this technique the samples under investigation are prepared in form of isotope heterostructures. These are nanometer sized thin films, which are chemically completely homogenous, but isotope modulated. Using this method, diffusion lengths in the order of 1 nm and below can be detected which allows to determine ultra low diffusivities in the order of 10-25 m2/s. For the model system amorphous silicon nitride we demonstrate how the structure of the isotope hetrostructures (triple layers or multilayers) influences the efficiency of diffusivity determination.


2011 ◽  
Vol 131 (7) ◽  
pp. 1305-1311 ◽  
Author(s):  
Mustafa Anutgan ◽  
Tamila (Aliyeva) Anutgan ◽  
Ismail Atilgan ◽  
Bayram Katircioglu

1990 ◽  
Vol 189 (1) ◽  
pp. 111-123 ◽  
Author(s):  
J.L. Jauberteau ◽  
D. Conte ◽  
M.I. Baraton ◽  
P. Quintard ◽  
J. Aubreton ◽  
...  

2002 ◽  
Vol 151-152 ◽  
pp. 268-271 ◽  
Author(s):  
G. Compagnini ◽  
C. Galati ◽  
C. Miliani ◽  
R.S. Cataliotti

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