Combined in-depth X-ray Photoelectron Spectroscopy and Time-of-Flight Secondary Ion Mass Spectroscopy study of the effect of deposition pressure and substrate bias on the electrical properties and composition of Ga-doped ZnO thin films grown by magnetron sputtering

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

Download Full-text

X-Ray Absorption Spectroscopy Study of Copper Doped ZnO Thin Films

10.1063/1.2644570 ◽

2007 ◽

Author(s):

Qing Ma ◽

D. B. Buchholz ◽

Mark Anderson ◽

Larry Aagesen ◽

R. P. H. Chang

Keyword(s):

Thin Films ◽

Absorption Spectroscopy ◽

Zno Thin Films ◽

Spectroscopy Study ◽

X Ray ◽

Doped Zno ◽

X Ray Absorption

Download Full-text

X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2009.01.128 ◽

2009 ◽

Vol 311 (8) ◽

pp. 2341-2344 ◽

Cited By ~ 10

Author(s):

G.D. Yuan ◽

Z.Z. Ye ◽

J.Y. Huang ◽

Z.P. Zhu ◽

C.L. Perkins ◽

...

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Zno Thin Films ◽

Spectroscopy Study ◽

X Ray ◽

P Type ◽

Co Doped

Download Full-text

Effect of Cu Dopant on the Electrical Property of ZnO Thin Films Deposited by Pulsed Laser Deposition

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.339 ◽

2007 ◽

Vol 124-126 ◽

pp. 339-342

Author(s):

Gun Hee Kim ◽

Hong Seong Kang ◽

Dong Lim Kim ◽

Hyun Woo Chang ◽

Byung Du Ahn ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Laser Deposition ◽

Zno Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Deposition Conditions

Cu-doped ZnO (denoted by ZnO:Cu) films have been prepared by pulsed laser deposition using 3 wt. CuO doped ZnO ceramic target. The carrier concentrations (1011~1018 cm-3) and, electrical resistivity (10-1~105 cm) of deposited Cu-doped ZnO thin films were varied depending on deposition conditions. Variations of electrical properties of Cu-doped ZnO indicate that copper dopants may play an important role in determining their electrical properties, compared with undoped films. To investigate effects of copper dopants on the properties of ZnO thin films, X-Ray diffraction (XRD), photoluminescence (PL), and Hall measurements have been performed and corresponded.

Download Full-text