scholarly journals Hard X-ray photoelectron spectroscopy of transparent conductive heavily doped ZnO thin films

2019 ◽  
Vol 26 (2) ◽  
pp. 166-167
Author(s):  
Hisao Makino
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
X Ray ◽  
Heavily Doped ◽  
Doped Zno

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

Structure, X-ray photoelectron spectroscopy and photoluminescence investigations of the spray deposited cobalt doped ZnO thin films

2014 ◽  
Vol 106 ◽  
pp. 26-32 ◽  
Author(s):  
N.L. Tarwal ◽  
K.V. Gurav ◽  
T. Prem Kumar ◽  
Y.K. Jeong ◽  
H.S. Shim ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
X Ray ◽  
Doped Zno

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

scholarly journals Methylene Blue Photodegradation under Visible Irradiation on Ag-Doped ZnO Thin Films

2020 ◽  
Vol 2020 ◽  
pp. 1-11 ◽  
Author(s):  
William Vallejo ◽  
Alvaro Cantillo ◽  
Carlos Díaz-Uribe
Keyword(s):  
Thin Films ◽  
Methylene Blue ◽  
Raman Spectroscopy ◽  
Photocatalytic Degradation ◽  
Physicochemical Characterization ◽  
Zno Thin Films ◽  
Visible Range ◽  
X Ray ◽  
Visible Irradiation ◽  
Doped Zno

This study synthesized and characterized Ag-doped ZnO thin films. Doped ZnO powders were synthesized using the sol-gel method, and thin films were fabricated using the doctor blade technique. The Ag content was determined by optical emission spectrometers with inductively coupled plasma (ICP plasma). Additionally, X-ray diffraction, Raman spectroscopy, Atomic Force Microscopy (AFM), diffuse reflectance, and X-ray photoelectron spectroscopy (XPS) measurements were used for physicochemical characterization. Finally, the photocatalytic degradation of methylene blue (MB) was studied under visible irradiation in aqueous solution. The Langmuir-Hinshelwood model was used to determine the reaction rate constant of the photocatalytic degradation. The physicochemical characterization showed that the samples were polycrystalline, and the diffraction signals corresponded to the ZnO wurtzite crystalline phase. Raman spectroscopy verified the ZnO doping process. The AFM analysis showed that roughness and grain size were reduced after the doping process. Furthermore, the optical results indicated that the presence of Ag improved the ZnO optical properties in the visible range, and the Ag-doped ZnO thin films had the lowest band gap value (2.95 eV). Finally, the photocatalytic degradation results indicated that the doping process enhanced the photocatalytic activity under visible irradiation, and the Ag-doped ZnO thin films had the highest MB photodegradation value (45.1%), as compared to that of the ZnO thin films (2.7%).

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