scholarly journals Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

2019 ◽  
Vol 685 ◽  
pp. 414-419 ◽  
Author(s):  
Yi-Shu Hsieh ◽  
Chien-Yu Li ◽  
Chang-Min Lin ◽  
Na-Fu Wang ◽  
Jian V. Li ◽  
...  
2005 ◽  
Vol 44 (11) ◽  
pp. 7913-7915 ◽  
Author(s):  
J. D. Hwang ◽  
Gwo Huei Yang ◽  
Yuan Yi Yang ◽  
Pin Cuan Yao

2007 ◽  
Vol 46 (8A) ◽  
pp. 5119-5121 ◽  
Author(s):  
Gow-Huei Yang ◽  
Jun-Dar Hwang ◽  
Chih-Hsueh Lan ◽  
Chien-Mao Chan ◽  
Hone-Zem Chen ◽  
...  

1998 ◽  
Vol 37 (Part 2, No. 2A) ◽  
pp. L158-L160 ◽  
Author(s):  
Chien-Jung Huang ◽  
Mau-Phon Houng ◽  
Yeong-Her Wang ◽  
Na-Fu Wang ◽  
Wai-Jyh Chang

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.


2011 ◽  
Vol 53 (9) ◽  
pp. 1921-1926 ◽  
Author(s):  
G. L. Klimchitskaya ◽  
A. B. Fedortsov ◽  
Yu. V. Churkin ◽  
V. A. Yurova

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JF06
Author(s):  
Chin-Hsiang Chen ◽  
Chia-Ming Tsai ◽  
Ming-Han Yang ◽  
Wei-Chi Lin ◽  
Shih-Kun Liu

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