Nitride formation during reactive sputter deposition of multi-principal element alloys in argon/nitrogen mixtures

2021 ◽  
pp. 138721
Author(s):  
Diederik Depla ◽  
Robin Dedoncker ◽  
Koen Strijckmans
Keyword(s):  
Sputter Deposition ◽  
Principal Element ◽  
Reactive Sputter Deposition ◽  
Nitride Formation

Reactive sputter deposition of titanium dioxide

2000 ◽  
Vol 360 (1-2) ◽  
pp. 122-127 ◽  
Author(s):  
Rand Dannenberg ◽  
Phil Greene
Keyword(s):  
Titanium Dioxide ◽  
Sputter Deposition ◽  
Reactive Sputter Deposition

scholarly journals In-Situ Thin Film Growth of PbTiO3 By Multi Target Sputtering

1994 ◽  
Vol 341 ◽  
Author(s):  
Thomas Maeder ◽  
Paul Muralt
Keyword(s):  
Lead Oxide ◽  
Film Growth ◽  
Sputter Deposition ◽  
Dielectric Constants ◽  
Thin Film Growth ◽  
Film Morphology ◽  
Reactive Sputter Deposition ◽  
Pt Electrodes ◽  
Oxide Flux

AbstractThe in-situ reactive sputter deposition of PbTiO3 on Pt/Ti/SiO2/Si from two metallic targets was investigated. A minimal lead oxide flux of two to three times the titanium oxide flux is needed in order to obtain stoichiometric films with the perovskite structure. For higher fluxes, the Pb/Ti ratio in the film stays at the stoichiometric value 1; the orientation changes from random to <100>; and the film morphology transforms from a rough to a smooth polycrystalline film. The obtained dielectric constants vary between 40 and 150, the losses between 2 and 4 % (10 kHz). The method could be extended to PbZrxTi1-xO3 for x ≤0.7. The orientation is lost when the Pt electrodes are replaced by RuO2 electrodes.

Application of ZnO to Passivate the GaN-based Device Structures

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
High Resistivity ◽  
Leakage Currents ◽  
Gan Hemt ◽  
Reactive Sputter Deposition ◽  
Device Structures ◽  
Hygroscopic Nature ◽  
Output Characteristics ◽  
Lattice Matched

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Sign in / Sign up

Export Citation Format

Share Document