Development of magnetic-field and pulsed-plasma-enhanced chemical vapor deposition method to fabricate amorphous silicon carbonitride diaphragm for environmental-cell transmission electron microscope

Vacuum ◽  
2015 ◽  
Vol 122 ◽  
pp. 332-336 ◽  
Author(s):  
Kayo Yamasaki ◽  
Takaomi Matsutani ◽  
Norihiro Imaeda ◽  
Tadahiro Kawasaki
Keyword(s):  
Magnetic Field ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Carbonitride ◽  
Chemical Vapor Deposition Method ◽  
Pulsed Plasma ◽  
Deposition Method ◽  
Transmission Electron ◽  
Environmental Cell

Synthesis of Double-Walled Carbon Nanotubes by Floating Chemical Vapor Deposition Method in a Reactor with Varied Diameter

2013 ◽  
Vol 662 ◽  
pp. 3-6
Author(s):  
Chang Yu ◽  
Xiang Tong Meng ◽  
Lei Zhang ◽  
Jie Shan Qiu
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Catalyst Precursor ◽  
Deposition Method ◽  
Double Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Double-walled carbon nanotubes (DWCNTs) have been synthesized by a floating catalytic chemical vapor deposition method (FC-CVD) in diameter-varied reactor with xylene as carbon sources, ferrocene as catalyst precursor, and sulfur as additive. The as-grown products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), and Raman spectrometer. The results show that DWCNTs with a high graphite degree is centimeter-scale in length, and the inner diameter varies in the range of 1.5-1.7 nm. The effect of reactor diameter on the structure and morphology of the products was also investigated and compared. It is believed that the diameter-varied reactor may become a feasible route to the mass and continuous production of DWCNTs.

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

2016 ◽  
Vol 697 ◽  
pp. 841-845 ◽  
Author(s):  
Jia Xing Chang ◽  
Rong Zheng Liu ◽  
Ma Lin Liu ◽  
You Lin Shao ◽  
Bing Liu
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Raw Material ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
X Ray ◽  
Wide Range

Silicon carbide nanowires have been extensively studied because of their unique physical and chemical properties. They can be applied in high temperature, high frequency, high power, and corrosive environments, and have a wide range of applications in electronics, chemical industry, energy and other fields. In this paper, SiC nanowires with high output were synthesized by chemical vapor deposition method using methyltrichlorosilane as raw material. The influences of the catalyst and temperature were studied. SiC nanochains were also obtained by adding Al2O3 powder under appropriate temperature controlled strategy. These two kinds of one-dimensional SiC nanomaterials were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray spectrometer (EDS) and transmission electron microscope (TEM) methods.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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