Phosphorus removal from upgraded metallurgical-grade silicon by vacuum directional solidification

Vacuum ◽  
2017 ◽  
Vol 146 ◽  
pp. 159-163 ◽  
Author(s):  
Cong Zhang ◽  
Kuixian Wei ◽  
Damin Zheng ◽  
Wenhui Ma ◽  
Yongnian Dai
2013 ◽  
Vol 750 ◽  
pp. 316-319
Author(s):  
Wen Hui Ma ◽  
Yong Jiang ◽  
Yang Zhou ◽  
Kui Xian Wei ◽  
Bin Yang ◽  
...  

The structural defects including dislocations and grain boundaries (GBs) in upgraded metallurgical grade silicon (UMG-Si) prepared by vacuum directional solidification were investigated. The results demonstrated that higher withdrawal rates increased the dislocation density. The state of melt growth changed from quasi-equilibrium to non-equilibrium, and the GB type was also highly related to the withdrawal rate, especially for ∑3 boundary. The change of total interfacial energy and increase of carbon concentration may be a possible driving mechanism for this phenomenon.


2013 ◽  
Vol 5 (2) ◽  
pp. 023129 ◽  
Author(s):  
A. D. S. Côrtes ◽  
D. S. Silva ◽  
G. A. Viana ◽  
E. F. Motta ◽  
P. R. Zampieri ◽  
...  

2014 ◽  
Vol 120 ◽  
pp. 390-395 ◽  
Author(s):  
Maxime Forster ◽  
Pierre Wagner ◽  
Julien Degoulange ◽  
Roland Einhaus ◽  
Giuseppe Galbiati ◽  
...  

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