Electrochemical degradation of refractory pollutants using TiO 2 single crystals exposed by high-energy {001} facets

A computer program for following the trajectories of high energy ions in an fcc-lattice has been written to evaluate the reflection rate of high energy ions with grazing incidence to (001)- and (111̅)-Au-surfaces. The calculation yields a rapid decrease of the reflection rate for penetration directions close to low-index atomic planes. It can be shown that this result is caused by channeling of the ions between the atomic planes.

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A spectrometer to study spontaneous radiation due to the channeling of high energy electrons and positrons in single crystals

Nuclear Instruments and Methods in Physics Research ◽

10.1016/0167-5087(83)90259-4 ◽

1983 ◽

Vol 211 (2-3) ◽

pp. 353-362 ◽

Cited By ~ 1

Author(s):

N.A. Filatova ◽

A. Forycki ◽

I.I. Evsikov ◽

V.M. Golovatyuk ◽

Z. Guzik ◽

...

Keyword(s):

Single Crystals ◽

High Energy ◽

Spontaneous Radiation ◽

High Energy Electrons ◽

Electrons And Positrons

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RBS/Channeling Diffusion Studies of High Energy Au Implanted Mg Single Crystals

MRS Proceedings ◽

10.1557/proc-235-497 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 2

Author(s):

R. C. Da Selva ◽

M. F. Da Silva ◽

L. Thomé ◽

A. A. Melo ◽

J. C. Soares

Keyword(s):

Single Crystals ◽

Temperature Regime ◽

High Energy ◽

Back Diffusion ◽

Thermally Activated ◽

Diffusion Studies ◽

Higher Temperature ◽

Diffusion Behaviour ◽

Thermally Activated Process

ABSTRACTRBS/channeling analyses of high energy Au implantation into Mg are presented. The diffusion behaviour of Au was studied and the occurrence of essentially two distinct regimes were observed: the segregation regime at lower temperatures correlated with the damage introduced by the high energy implantation and the higher temperature regime as a normal thermally activated process of back-diffusion.

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Luminescence in KI:Tl

Australian Journal of Physics ◽

10.1071/ph610368 ◽

1961 ◽

Vol 14 (3) ◽

pp. 368 ◽

Cited By ~ 3

Author(s):

JE Alderson ◽

SE Williams

Keyword(s):

Single Crystals ◽

High Energy ◽

Activator Concentration ◽

Host Crystal ◽

Absorption Bands ◽

High Energy Side ◽

Luminescence Efficiency ◽

Vacuum Monochromator ◽

Impurity Centre ◽

Energy Side

Freshly cleaved single crystals of KI:TI containing various concentrations of Tl have been irradiated in a vacuum monochromator in the 2800-1100 A region at temper. atures between -140 and 45 �0. The relative luminescence efficiencies in the Tl absorption bands and the host crystal fundamental absorption show that energy is transferred from host crystal to impurity centre to produce luminescence at room temperatures. To the high energy side of a threshold, which appears to depend on activator concentration, the luminescence efficiency is superlinear above about 15 �0 for KI:Tl (0�0005%).

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