Indentation Fracture of High-Energy Ion Implanted Alpha-Alumina Single Crystals

1991 ◽  
pp. 361-366 ◽  
Author(s):  
R. Nowak ◽  
Y. Horino ◽  
K. Ueno ◽  
M. Kinoshita ◽  
W. Ensinger ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Indentation Fracture ◽  
Alpha Alumina ◽  
Ion Implanted

Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

1989 ◽  
Vol 32 (3) ◽  
pp. 198-203
Author(s):  
A. N. Georgobiani ◽  
M. B. Kotlyarevskii ◽  
B. P. Dement'ev ◽  
V. N. Mikhalenko ◽  
N. V. Serdyuk ◽  
...  
Keyword(s):  
Single Crystals ◽  
Radiation Induced ◽  
Induced Defects ◽  
Ion Implanted

Luminescence Centers in High-Energy Ion-Implanted Silicon

1997 ◽  
Vol 258-263 ◽  
pp. 587-592 ◽  
Author(s):  
Koichi Terashima ◽  
Taeko Ikarashi ◽  
Masahito Watanabe ◽  
Tomohisa Kitano
Keyword(s):  
High Energy ◽  
Luminescence Centers ◽  
Ion Implanted

Electrochemical degradation of refractory pollutants using TiO 2 single crystals exposed by high-energy {001} facets

2014 ◽  
Vol 66 ◽  
pp. 273-282 ◽  
Author(s):  
Ai-Yong Zhang ◽  
Lu-Lu Long ◽  
Chang Liu ◽  
Wen-Wei Li ◽  
Han-Qing Yu
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Electrochemical Degradation

Ultrafast carrier trapping in high energy ion implanted gallium arsenide

1996 ◽  
Vol 68 (16) ◽  
pp. 2225-2227 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
A. Krotkus ◽  
S. Marcinkevicius ◽  
K. P. Korona ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
High Energy ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

Luminescence and photoconductivity of gadolinium gallium garnet single crystals irradiated by high-energy electrons and neutrons

1993 ◽  
Vol 140 (2) ◽  
pp. 353-361 ◽  
Author(s):  
V. I. Vasyltsiv ◽  
Ya. M. Zakharko ◽  
A. O. Matkovskii ◽  
D. Yu. Sugak ◽  
S. B. Ubizskii ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Energy ◽  
Gadolinium Gallium Garnet ◽  
High Energy Electrons

Computersimulation der Rückstreuung schneller schwerer Ionen an einkristallinen (001)-und (111̅)-Goldoberflächen / Computer Simulation of the Backscattering of High Energy Ions from (001)- and (111̅)-surfaces of Au-Single Crystals

1976 ◽  
Vol 31 (3-4) ◽  
pp. 316-326 ◽  
Author(s):  
H. Schmidt ◽  
K. Güttner
Keyword(s):  
Computer Simulation ◽  
Computer Program ◽  
Single Crystals ◽  
Grazing Incidence ◽  
High Energy ◽  
Rapid Decrease ◽  
Fcc Lattice ◽  
High Energy Ions

A computer program for following the trajectories of high energy ions in an fcc-lattice has been written to evaluate the reflection rate of high energy ions with grazing incidence to (001)- and (111̅)-Au-surfaces. The calculation yields a rapid decrease of the reflection rate for penetration directions close to low-index atomic planes. It can be shown that this result is caused by channeling of the ions between the atomic planes.

Terahertz continuous-wave large-area traveling-wave photomixers on high-energy low-dose ion-implanted GaAs

2007 ◽  
Vol 90 (17) ◽  
pp. 171109 ◽  
Author(s):  
E. A. Michael ◽  
I. Cámara Mayorga ◽  
R. Güsten ◽  
A. Dewald ◽  
R. Schieder
Keyword(s):  
Traveling Wave ◽  
Low Dose ◽  
Continuous Wave ◽  
High Energy ◽  
Large Area ◽  
Ion Implanted

RBS/Channeling Diffusion Studies of High Energy Au Implanted Mg Single Crystals

1991 ◽  
Vol 235 ◽  
Author(s):  
R. C. Da Selva ◽  
M. F. Da Silva ◽  
L. Thomé ◽  
A. A. Melo ◽  
J. C. Soares
Keyword(s):  
Single Crystals ◽  
Temperature Regime ◽  
High Energy ◽  
Back Diffusion ◽  
Thermally Activated ◽  
Diffusion Studies ◽  
Higher Temperature ◽  
Diffusion Behaviour ◽  
Thermally Activated Process

ABSTRACTRBS/channeling analyses of high energy Au implantation into Mg are presented. The diffusion behaviour of Au was studied and the occurrence of essentially two distinct regimes were observed: the segregation regime at lower temperatures correlated with the damage introduced by the high energy implantation and the higher temperature regime as a normal thermally activated process of back-diffusion.

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