scholarly journals Low-sintering-temperature garnet oxides by conformal sintering-aid coating

2021 ◽  
Vol 2 (9) ◽  
pp. 100569
Author(s):  
Shaojie Chen ◽  
Xiangchen Hu ◽  
Wenda Bao ◽  
Zeyu Wang ◽  
Qun Yang ◽  
...  
Keyword(s):  
Sintering Temperature ◽  
Sintering Aid ◽  
Low Sintering Temperature

Low-Temperature Sintering and Microwave Dielectric Properties of the Zn2SiO4 Ceramics

2009 ◽  
Vol 66 ◽  
pp. 104-107 ◽  
Author(s):  
Ying Dai ◽  
Yao Sun ◽  
Wen Chen
Keyword(s):  
Dielectric Properties ◽  
Solid State ◽  
Low Temperature ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Microwave Dielectric Properties ◽  
Low Temperature Sintering ◽  
Sintering Aid ◽  
Microwave Dielectric ◽  
Low Sintering Temperature

Willemite ceramics (Zn2SiO4) possess excellent millimeter-wave dielectric properties, but it also has a high sintering temperature above 1300°C by traditional solid-state reaction and relatively large negative τf value. Zn2SiO4 nanoparticles synthesized by Sol–Gel method were used to improve the sintering and dielectric properties of the Zn2SiO4 ceramics. Using the nanoparticles, Zn2SiO4 ceramics can be sintered at a low temperature, 1150°C and exhibited improved microwave dielectric properties of εr =6.62, Q × f=24500 GHz, τf =-59ppm/°C. By adding TiO2 with high positive τf value (+450 ppm/°C) and CuO as sintering aid, near zero τf value and low sintering temperature can be achieved. With 11wt% of TiO2 and 5 wt% of CuO, an εr value of 9.3, a Q × f value of 12200GHz and a τf value of -11 ppm/°C were obtained at 1000°C, confirming the promising potential of the CuO-added TiO2-Zn2SiO4 ceramics as candidate materials for low–temperature cofired ceramic (LTCC) devices.

Properties of lead-free BZT–BCT ceramics synthesized using nanostructured ZnO as a sintering aid

2015 ◽  
Vol 29 (32) ◽  
pp. 1550231 ◽  
Author(s):  
Dang Anh Tuan ◽  
Vo Thanh Tung ◽  
Truong Van Chuong ◽  
Le Van Hong
Keyword(s):  
Zno Nanoparticles ◽  
Piezoelectric Properties ◽  
Sintering Temperature ◽  
Lead Free ◽  
Dielectric Measurements ◽  
High Quality ◽  
Sintering Aid ◽  
Lead Free Ceramics ◽  
Low Sintering Temperature ◽  
Type Lattice

This article studies the microstructure and piezoelectric properties of low sintering temperature lead-free ceramics [Formula: see text]-doped with ZnO nanoparticles (noted as 0.48BZT-y, y is content of ZnO in wt%, y =0.00, 0.05, 0.10, 0.15, 0.20 and 0.25). The obtained results of Raman scattering and dielectric measurements have confirmed that [Formula: see text] has occupied B site, to cause a deformation in the ABO3-type lattice of the 0.48BZT-y compounds. The 0.15 wt% ZnO-doped ceramic sintered at 1350[Formula: see text]C exhibited excellent piezoelectric parameters: [Formula: see text], [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]. The obtained results indicate that the high-quality lead-free BZT–BCT ceramic could be successfully synthesized at a low sintering temperature of 1350[Formula: see text]C by doping an appropriated amount of ZnO.

LARGE PIEZOELECTRIC EFFECT IN LOW-TEMPERATURE-SINTERED LEAD-FREE (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 THICK FILMS

2012 ◽  
Vol 05 (03) ◽  
pp. 1250029 ◽  
Author(s):  
ZUYONG FENG ◽  
DONGQI SHI ◽  
SHIXUE DOU ◽  
YIHUA HU ◽  
XINGUI TANG
Keyword(s):  
Low Temperature ◽  
Microelectromechanical Systems ◽  
Piezoelectric Effect ◽  
Sintering Temperature ◽  
Thick Films ◽  
Lead Free ◽  
High Quality ◽  
Sintering Aid ◽  
Promising Application ◽  
Low Sintering Temperature

High-quality piezoelectric ( Ba 0.85 Ca 0.15)( Zr 0.1 Ti 0.9) O 3 thick films with dense and homogenous microstructures were fabricated at a low sintering temperature (900°C) using a CuBi 2 O 4 sintering aid. The 10 μm thick film exhibited a high longitudinal piezoelectric constant d33, eff of 210 pC/N with estimated unconstrained d33 value of 560 pC/N very close to that in the corresponding bulks. Such excellent piezoelectric effect in the low-temperature sintered ( Ba 0.85 Ca 0.15)( Zr 0.1 Ti 0.9) O 3 thick films is comparable to the case of lead-based PZT thick films, and may be a promising application in lead-free microdevices such as piezoelectric microelectromechanical systems (MEMS).

scholarly journals Low-Sintering-Temperature Garnet Oxides by Conformal Sintering-Aid Coating

2021 ◽  
Author(s):  
Shaojie Chen ◽  
Xiangchen Hu ◽  
Wenda Bao ◽  
Zeyu Wang ◽  
Qun Yang ◽  
...  
Keyword(s):  
Sintering Temperature ◽  
Sintering Aid ◽  
Low Sintering Temperature

Preparation and Dielectric Properties of Li2O Doped BaZr0.25Ti0.75O3 Ceramics

2011 ◽  
Vol 284-286 ◽  
pp. 1460-1465
Author(s):  
Di Chen ◽  
Xiang Yun Deng ◽  
Jian Bao Li ◽  
Li Ming Wang ◽  
Xin Zheng Wu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Liquid Phase ◽  
Sintering Temperature ◽  
Liquid Phase Sintering ◽  
X Ray Diffraction ◽  
Sintering Aid ◽  
X Ray ◽  
Ceramic Process ◽  
Low Sintering Temperature

BaZr0.25Ti0.75O3(BZT) ceramics were prepared by conventional ceramic process at a relatively low sintering temperature and with an addition of Li2O as the liquid-phase sintering aid. X-ray diffraction characterized results showed that the main crystal phase of the samples with 1.0wt% Li2O additive sintered at 1050°C～1250°C for 4h presented perovskite structure. The dielectric properties of BZT ceramics have been investigated. The dielectric constant of 1.0wt% Li2O doped BZT sintered at 1150°C decreased, and the dielectric loss increased by 0.0012 compared with that of the pure BZT sintered at 1450°C.

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