Does the standard TLS model fail to explain the experimental data on the long-lived stimulated photon echo in amorphous solids?

1997 ◽  
Vol 270 (1-2) ◽  
pp. 183-188 ◽  
Author(s):  
I.S. Osad'ko ◽  
M.A. Mikhailov ◽  
S.N. Gladenkova
Keyword(s):  
Experimental Data ◽  
Photon Echo ◽  
Amorphous Solids ◽  
Stimulated Photon Echo

PHOTON-ECHO STUDY OF ULTRAFAST DEPHASING IN AMORPHOUS SOLIDS IN WIDE TEMPERATURE REGION WITH INCOHERENT LIGHT

1991 ◽  
Vol 01 (C7) ◽  
pp. C7-439-C7-442 ◽  
Author(s):  
N. V. GRUZDEV ◽  
E. G. SIL'KIS ◽  
V. D. TITOV ◽  
Yu. G. VAINER
Keyword(s):  
Temperature Region ◽  
Photon Echo ◽  
Amorphous Solids ◽  
Incoherent Light

Investigation on Stimulated Photon Echo Induced by Optical Transition of 1se1sh Excitons in Core-shell CdSe/ZnS Quantum Dot-quantum Well

2012 ◽  
Vol 41 (1) ◽  
pp. 54-60
Author(s):  
龚少华 GONG Shao-hua ◽  
傅军 FU Jun ◽  
符运良 FU Yun-liang ◽  
沈振江 SHEN Zhen-jiang
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Optical Transition ◽  
Photon Echo ◽  
Core Shell ◽  
Stimulated Photon Echo

174Yb3P1level relaxation found via weak magnetic field dependence of collision-induced stimulated photon echo

Laser Physics ◽  
2018 ◽  
Vol 28 (6) ◽  
pp. 066001 ◽  
Author(s):  
N N Rubtsova ◽  
V G Gol’dort ◽  
E B Khvorostov ◽  
S A Kochubei ◽  
V A Reshetov
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Weak Magnetic Field ◽  
Magnetic Field Dependence ◽  
Photon Echo ◽  
Stimulated Photon Echo

Generalized Activation Energy Spectrum Theory: A New Approach for modeling Structural Relaxation in Amorphous Solids

1993 ◽  
Vol 321 ◽  
Author(s):  
Jung H. Shin ◽  
Harry A. Atwater
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Structural Relaxation ◽  
Ad Hoc ◽  
Amorphous Solids ◽  
Nucleation Kinetics ◽  
Crystal Silicon ◽  
Time Resolved ◽  
New Approach ◽  
Kinetics Of

ABSTRACTA general approach to the dynamics of structural relaxation in amorphous solids is developed. A form of the recombination kinetics of defects is chosen which removes the ad hoc assumption made in previous theories that defects recombine only with others of identical activation energy. The generalized theory is tested quantitatively by modelling the structural relaxation of amorphous silicon, and comparing the results with the experimental data on structural relaxation. It is found that the generalized theory is necessary in order to accurately describe the time-resolved relaxation data. The generalized theory is also applied to estimate the effect of irradiation on the nucleation kinetics of crystal silicon, and is found to agree well with experimental data.

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