InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

2001 ◽  
Vol 222 (4) ◽  
pp. 701-705 ◽  
Author(s):  
J. Aderhold ◽  
V.Yu. Davydov ◽  
F. Fedler ◽  
H. Klausing ◽  
D. Mistele ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6170-6173 ◽  
Author(s):  
Min-Ho Kim ◽  
Sung-Nam Lee ◽  
Nae-Man Park ◽  
Seong-Ju Park
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon

2000 ◽  
Vol 619 ◽  
Author(s):  
F. Niu ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Amorphous Layer ◽  
Film Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Epitaxial Relationship ◽  
Transmission Electron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTEpitaxial cubic MgO thin films were deposited on single crystal Si (001) substrates by metalorganic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate as the source and an RF excited oxygen plasma as the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The film structure was characterized by X-ray diffraction as well as conventional and high-resolution transmission electron microscopy. Both the MgO overlayer and β-SiC interlayer had an epitaxial relationship such that MgO (001) (or SiC (001)) // Si (001) and MgO [110] (or SiC [110])// Si [110]. No evidence of an amorphous layer was observed at either the MgO/SiC or SiC/Si interface. Dielectric properties of the epitaxial MgO thin films on Si (001) were evaluated from capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor (MOS) structures. The C-V measurements indicated an interface trap density at midgap as low as 1011 to 1012 cm−2 eV−1 and fixed oxide charge of the order of 1011/ cm2, respectively. These results indicate that epitaxial MgO deposited by MOMBE has potential as a gate insulator.

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct

1993 ◽  
Vol 63 (9) ◽  
pp. 1270-1272 ◽  
Author(s):  
J. S. Foord ◽  
T. J. Whitaker ◽  
E. N. Downing ◽  
D. O’Hare ◽  
A. C. Jones
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Boron Nitride Thin Films Grown on (0001) Sapphire Substrates by Molecular Beam Epitaxy

2017 ◽  
Author(s):  
Y. Kobayashi ◽  
T. Kimura ◽  
H. Nakazawa ◽  
H. Okamoto ◽  
M. Hiroki ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Boron Nitride ◽  
Molecular Beam ◽  
Sapphire Substrates

Growth of non-polar Zn1−x Mg x O thin films with different Mg contents on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 116 (4) ◽  
pp. 1979-1983 ◽  
Author(s):  
W. Chen ◽  
X. H. Pan ◽  
P. Ding ◽  
H. H. Zhang ◽  
S. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates

Plasma-assisted molecular beam epitaxy of ZnO thin films on sapphire substrates with an MgO buffer

2001 ◽  
Vol 227-228 ◽  
pp. 917-922 ◽  
Author(s):  
Y.F Chen ◽  
H.J Ko ◽  
S.K Hong ◽  
K Inaba ◽  
Y Segawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
Sapphire Substrates
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