Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6170-6173 ◽  
Author(s):  
Min-Ho Kim ◽  
Sung-Nam Lee ◽  
Nae-Man Park ◽  
Seong-Ju Park
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Metalorganic Molecular Beam Epitaxy of Magnesium Oxide on Silicon

2000 ◽  
Vol 619 ◽  
Author(s):  
F. Niu ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Amorphous Layer ◽  
Film Structure ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
Epitaxial Relationship ◽  
Transmission Electron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTEpitaxial cubic MgO thin films were deposited on single crystal Si (001) substrates by metalorganic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate as the source and an RF excited oxygen plasma as the oxidant. The growth process involved initial formation of an epitaxial β-SiC interlayer followed by direct deposition of a MgO overlayer. The film structure was characterized by X-ray diffraction as well as conventional and high-resolution transmission electron microscopy. Both the MgO overlayer and β-SiC interlayer had an epitaxial relationship such that MgO (001) (or SiC (001)) // Si (001) and MgO [110] (or SiC [110])// Si [110]. No evidence of an amorphous layer was observed at either the MgO/SiC or SiC/Si interface. Dielectric properties of the epitaxial MgO thin films on Si (001) were evaluated from capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor (MOS) structures. The C-V measurements indicated an interface trap density at midgap as low as 1011 to 1012 cm−2 eV−1 and fixed oxide charge of the order of 1011/ cm2, respectively. These results indicate that epitaxial MgO deposited by MOMBE has potential as a gate insulator.

Investigation of the growth of gallium arsenide thin films by metalorganic molecular beam epitaxy using gallane‐quinuclidine adduct

1993 ◽  
Vol 63 (9) ◽  
pp. 1270-1272 ◽  
Author(s):  
J. S. Foord ◽  
T. J. Whitaker ◽  
E. N. Downing ◽  
D. O’Hare ◽  
A. C. Jones
Keyword(s):  
Thin Films ◽  
Gallium Arsenide ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

2001 ◽  
Vol 222 (4) ◽  
pp. 701-705 ◽  
Author(s):  
J. Aderhold ◽  
V.Yu. Davydov ◽  
F. Fedler ◽  
H. Klausing ◽  
D. Mistele ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates ◽  
Metalorganic Molecular Beam Epitaxy

Molecular Beam Epitaxy of Highly Oriented Pentacene Thin Films on an Atomically Flat Sapphire Substrate

2005 ◽  
Vol 44 (8) ◽  
pp. 6249-6251 ◽  
Author(s):  
Kenji Itaka ◽  
Norikatsu Myojin ◽  
Mitsugu Yamashiro ◽  
Jun Yamaguchi ◽  
Hideomi Koinuma
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
Atomically Flat

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

scholarly journals Atmospheric oxygen in Mn doped GaAs/GaAs(001) thin films grown by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 54-57 ◽  
Author(s):  
J.F. Xu ◽  
P.M. Thibado ◽  
C. Awo-Affouda ◽  
R. Moore ◽  
V.P. LaBella
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atmospheric Oxygen ◽  
Mn Doped

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam
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