Critical layer thickness study in In0.75Ga0.25As/In0.5Al0.5As pseudomorphic resonant tunneling diode structure grown on GaAs substrates

2001 ◽  
Vol 227-228 ◽  
pp. 161-166 ◽  
Author(s):  
Shin-ichiro Gozu ◽  
Tomohiro Kita ◽  
Tomoyuki Kikutani ◽  
Syoji Yamada
Keyword(s):  
Layer Thickness ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Diode Structure ◽  
Critical Layer ◽  
Critical Layer Thickness ◽  
Tunneling Diode ◽  
Gaas Substrates

Long Wavelength Type II InAs/GaSb Superlattice Photodetector Using Resonant Tunneling Diode Structure

2020 ◽  
Vol 41 (1) ◽  
pp. 73-75
Author(s):  
Biying Nie ◽  
Jianliang Huang ◽  
Chengcheng Zhao ◽  
Yanhua Zhang ◽  
Wenquan Ma
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Diode Structure ◽  
Type Ii ◽  
Long Wavelength ◽  
Tunneling Diode

Insitumeasurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates

1989 ◽  
Vol 55 (16) ◽  
pp. 1659-1661 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. Jagannath ◽  
Johnson Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Critical Layer ◽  
Optical Studies ◽  
Critical Layer Thickness ◽  
Gaas Substrates

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized
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