RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 545-549 ◽  
Author(s):  
I Krestnikov
Keyword(s):  
2008 ◽  
Vol 103 (10) ◽  
pp. 103101 ◽  
Author(s):  
J. K. Son ◽  
S. N. Lee ◽  
H. S. Paek ◽  
T. Sakong ◽  
H. K. Kim ◽  
...  

1990 ◽  
Vol 56 (11) ◽  
pp. 990-992 ◽  
Author(s):  
M. Seto ◽  
A. Shahar ◽  
R. J. Deri ◽  
W. J. Tomlinson ◽  
A. Yi‐Yan

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 809
Author(s):  
Sayed Elshahat ◽  
Israa Abood ◽  
Zixian Liang ◽  
Jihong Pei ◽  
Zhengbiao Ouyang

A paradigm for high buffering performance with an essential fulfillment for sensing and modulation was set forth. Through substituting the fundamental two rows of air holes in an elongated hexagonal photonic crystal (E-PhC) by one row of the triangular gaps, the EPCW is molded to form an irregular waveguide. By properly adjusting the triangle dimension solitary, we fulfilled the lowest favorable value of the physical-size of each stored bit by about μ5.5510 μm. Besides, the EPCW is highly sensitive to refractive index (RI) perturbation attributed to the medium through infiltrating the triangular gaps inside the EPCW by microfluid with high RI sensitivity of about 379.87 nm/RIU. Furthermore, dynamic modulation can be achieved by applying external voltage and high electro-optical (EO) sensitivity is obtained of about 748.407 nm/RIU. The higher sensitivity is attributable to strong optical confinement in the waveguide region and enhanced light-matter interaction in the region of the microfluid triangular gaps inside the EPCW and conventional gaps (air holes). The EPCW structure enhances the interaction between the light and the sensing medium.


2009 ◽  
Vol 6 (S2) ◽  
pp. S897-S901 ◽  
Author(s):  
H. P. D. Schenk ◽  
M. Nemoz ◽  
M. Korytov ◽  
P. Vennéguès ◽  
P. Demolon ◽  
...  

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.


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