Growth and characterization of novel MgSe/ZnCdSe superlattice quasi-quaternaries on InP substrates

ABSTRACTPhotoreflectance (PR) has been performed on a series of undoped and n-type, InGaAs and InAlAs molecular beam epitaxy (MBE) grown layers with different In mole fractions, and epilayer thicknesses on Fe-doped semi-insulating (SI)-InP substrates. From investigations of the temperature dependence, time constant dependence and an additional cw light beam intensity dependence, three substrate peaks are identified as an excitonic transition from the substrate, a free electron transition near the interface which gives a Franz-Keldysh oscillation (KFO), and a transition from the spin-orbit split-off valence band. The results are indicative of a redistribution of charge near the substrate interface in the process of MBE growth; the associated PR signal (phase) could be used for in-situ monitoring of epilayer growth on SI-InP wafers.

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Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of short-period strained-layer superlattices (SPSLSs) on InP substrates

10.1117/12.175778 ◽

1994 ◽

Author(s):

A. Lindner ◽

Q. Liu ◽

F. Scheffer ◽

W. Prost ◽

Franz-Josef Tegude

Keyword(s):

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Strained Layer ◽

Short Period ◽

Movpe Growth ◽

Strained Layer Superlattices ◽

Inp Substrates

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Assessment of Multiple Epilayer III-V Compound Semi-Conductors by Synchrotron Radiation Diffractometry

Advances in X-ray Analysis ◽

10.1154/s0376030800010442 ◽

1985 ◽

Vol 29 ◽

pp. 345-352 ◽

Cited By ~ 1

Author(s):

D. K. Bowen ◽

S.T. Davies ◽

S. Swaminathan

Keyword(s):

Synchrotron Radiation ◽

Optoelectronic Device ◽

Double Crystal ◽

Rocking Curve ◽

Active Layers ◽

Methods Of Evaluation ◽

Inp Substrates ◽

Non Destructive ◽

Destructive Methods

An extensive programme of characterization of optoelectronic device material has been performed at the Synchrotron Radiation Source, Baresbury Laboratory, in collaboration with Plessey Research, Caswell. The material was grown by Plessey Research by liquid phase epitaxy on InP substrates and had quaternary active layers with, usually, four epilayers in total. Some specimens had graded epilayers. This paper reports use of the methods of double crystal topography, rocking curve analysis and simulation, selective etching and Talysurf measurement in order to develop and assess non-destructive methods of evaluation. The destructive methods above were therefore used in order to test and verify the non-destructive X-ray techniques.

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7588. Growth by molecular-beam epitaxy and characterization of (InAs)m(GaAs)m short period superlattices on InP substrates

Vacuum ◽

10.1016/0042-207x(91)91656-9 ◽

1991 ◽

Vol 42 (10-11) ◽

pp. 684

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Short Period ◽

Short Period Superlattices ◽

Inp Substrates

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Deep Level Characterization of LP-MOCVD Grown Al0.48In0.52As

MRS Proceedings ◽

10.1557/proc-325-235 ◽

1993 ◽

Vol 325 ◽

Cited By ~ 8

Author(s):

F. Ducroquet ◽

G. Guillot ◽

K. Hong ◽

C.H. Hong ◽

D. Pavlidis ◽

...

Keyword(s):

Deep Level ◽

Shallow Donor ◽

Electrical Characteristics ◽

Oxygen Contamination ◽

Deep Donor ◽

Low Pressure Mocvd ◽

Different Origins ◽

Inp Substrates ◽

Preferential Incorporation

AbstractDeep levels in unintentionally doped A10. 48In0.52As layers epitaxially grown on InP substrates by low-pressure MOCVD have been investigated as a function of growth temperature (Tg ranging from 570 to 690°C). Two different origins for the residual carrier concentration are deduced depending on Tg: i) low growth temperatures favor the creation of a deep donor located at Ec-(0.13±0.04)eV; ii) At higher Tg, a preferential incorporation of a shallow donor occurs, which can be attributed to silicon by SIMS measurements. The oxygen contamination deduced by SIMS and the electrical characteristics of the AlInAs layers do not appear to be correlated.

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