Atomic layer epitaxy processes of ZnSe on GaAs(001) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

1999 ◽  
Vol 201-202 ◽  
pp. 490-493 ◽  
Author(s):  
Akihiro Ohtake ◽  
Takashi Hanada ◽  
Kenta Arai ◽  
Takuji Komura ◽  
Shiro Miwa ◽  
...  
Sign in / Sign up

Export Citation Format

Share Document