In situ observation of the growth process of the InAsGaAs heteroepitaxial system using scanning microprobe reflection high energy electron diffraction-total reflection angle X-ray spectroscopy

1993 ◽  
Vol 228 (1-2) ◽  
pp. 18-22 ◽  
Author(s):  
S. Shimizu ◽  
K. Yamamuro ◽  
K. Fuwa ◽  
H. Yanagida ◽  
H. Yamakawa ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Total Reflection ◽  
Energy Electron ◽  
In Situ Observation ◽  
High Energy Electron ◽  
X Ray ◽  
Reflection Angle

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

In situ observation of the strain of Co and Ni deposited on Pd (111) by reflection high energy electron diffraction

1991 ◽  
Vol 70 (6) ◽  
pp. 3180-3183 ◽  
Author(s):  
T. Yamazaki ◽  
Y. Suzuki ◽  
T. Katayama ◽  
M. Taninaka ◽  
K. Nakagawa ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Observation ◽  
High Energy Electron
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