Observation of different reflected high-energy electron diffraction patterns during atomic layer epitaxy growth of CdTe epilayers

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90829-t ◽

1991 ◽

Vol 115 (1-4) ◽

pp. 692-697 ◽

Author(s):

W. Faschinger ◽

P. Juza ◽

H. Sitter

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Diffraction Patterns

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Direct observation of GaAs atomic layer epitaxy by reflection high‐energy electron diffraction

Applied Physics Letters ◽

10.1063/1.101666 ◽

1989 ◽

Vol 55 (12) ◽

pp. 1244-1246 ◽

Author(s):

T. H. Chiu

Keyword(s):

Electron Diffraction ◽

Direct Observation ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

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Atomic‐layer epitaxy by a flux‐interruption and annealing method and the analysis of reflection high‐energy electron diffraction oscillation overshoot in the molecular‐beam epitaxy growth of GaAs

Journal of Applied Physics ◽

10.1063/1.352976 ◽

1993 ◽

Vol 73 (7) ◽

pp. 3291-3294 ◽

Author(s):

Kun‐jing Lee ◽

Joseph Ya‐min Lee ◽

Yu‐jeng Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Annealing Method

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Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor: Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.1051 ◽

1993 ◽

Vol 32 (Part 1, No. 3A) ◽

pp. 1051-1055 ◽

Author(s):

Kuninori Kitahara ◽

Masashi Ozeki ◽

Kazuo Nakajima

Keyword(s):

Chemical Vapor Deposition ◽

Electron Diffraction ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Chemical Vapor Deposition Reactor

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Surface stoichiometry determination using reflection high-energy electron diffraction and atomic-layer epitaxy: The case of ZnTe(100)

Physical Review B ◽

10.1103/physrevb.52.7822 ◽

1995 ◽

Vol 52 (11) ◽

pp. 7822-7825 ◽

Author(s):

B. Daudin ◽

S. Tatarenko ◽

D. Brun-Le Cunff

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

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Real‐time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs

Applied Physics Letters ◽

10.1063/1.109293 ◽

1993 ◽

Vol 62 (20) ◽

pp. 2551-2553 ◽

Author(s):

B. Y. Maa ◽

P. D. Dapkus ◽

P. Chen ◽

A. Madhukar

Keyword(s):

Electron Diffraction ◽

Real Time ◽

Atomic Layer ◽

High Energy ◽

Beam Intensity ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron

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Atomic layer epitaxy processes of ZnSe on GaAs(001) as observed by beam-rocking reflection high-energy electron diffraction (RHEED) and total-reflection-angle X-ray spectroscopy (TRAXS)

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)01383-9 ◽

1999 ◽

Vol 201-202 ◽

pp. 490-493 ◽

Author(s):

Akihiro Ohtake ◽

Takashi Hanada ◽

Kenta Arai ◽

Takuji Komura ◽

Shiro Miwa ◽

...

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Total Reflection ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

X Ray ◽

Reflection Angle

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Dynamic Reflection High-Energy Electron Diffraction Observations of the Atomic Layer Epitaxy Growth of Zn Chaleogenides

Japanese Journal of Applied Physics ◽

10.1143/jjap.25.l942 ◽

1986 ◽

Vol 25 (Part 2, No. 12) ◽

pp. L942-L944 ◽

Author(s):

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

Atomic Layer Epitaxy ◽

High Energy Electron ◽

Dynamic Reflection

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Comparative analysis of high energy electron diffraction patterns from LB films of Cd- and Pb-stearates

Thin Solid Films ◽

10.1016/s0040-6090(95)08307-3 ◽

1996 ◽

Vol 284-285 ◽

pp. 208-210 ◽

Author(s):

V. Klechkovskaya ◽

M. Anderle ◽

R. Antolini ◽

R. Canteri ◽

L. Feigin ◽

...

Keyword(s):

Comparative Analysis ◽

Electron Diffraction ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Lb Films ◽

Diffraction Patterns

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Atomic layer controlled doping by reflection high‐energy electron diffraction during epitaxial growth

Journal of Applied Physics ◽

10.1063/1.351036 ◽

1992 ◽

Vol 71 (6) ◽

pp. 2650-2654 ◽

Author(s):

Ziqiang Zhu ◽

Mitsuo Kawashima ◽

Takafumi Yao

Keyword(s):

Electron Diffraction ◽

Epitaxial Growth ◽

Atomic Layer ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Controlled Doping

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Structural Analysis of the Si(111)√21 × √21-(Ag,Au) Surface by Reflection High-Energy Electron Diffraction Patterns

e-Journal of Surface Science and Nanotechnology ◽

10.1380/ejssnt.2008.84 ◽

2008 ◽

Vol 6 (0) ◽

pp. 84-86

Author(s):

Nozomi Kido ◽

Ayahiko Ichimiya

Keyword(s):

Structural Analysis ◽

Electron Diffraction ◽

High Energy ◽

Energy Electron ◽

High Energy Electron ◽

Diffraction Patterns

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