Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy

1998 ◽  
Vol 80 (1-4) ◽  
pp. 147-152 ◽  
Author(s):  
M Fried ◽  
O Polgár ◽  
T Lohner ◽  
S Strehlke ◽  
C Levy-Clement
Keyword(s):  
Porous Silicon ◽  
Comparative Study ◽  
Mass Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Siox Related Photoluminescence Excitation in Porous Silicon

1995 ◽  
Vol 405 ◽  
Author(s):  
T. V. Torchinskaya ◽  
N. E. Korsunskaya ◽  
B. R. Dzumaev ◽  
M. K. Sheinkman
Keyword(s):  
Porous Silicon ◽  
Mass Spectroscopy ◽  
Photoluminescence Excitation ◽  
Excitation Spectra ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

AbstractUsing PL, PLE, secondary ion mass spectroscopy (SIMS) and EPR investigations we show in this paper that two luminescence bands with different PL excitation spectra exist on the surface of silicon wires in PS.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
Nobuaki Takahashi ◽  
Teruyasu Mizoguchi ◽  
Tsubasa Nakagawa ◽  
Tetsuya Tohei ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
First Principles ◽  
Secondary Ion Mass Spectroscopy ◽  
First Principles Study ◽  
Secondary Ion
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