Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

Physical Review B ◽

10.1103/physrevb.82.174302 ◽

2010 ◽

Vol 82 (17) ◽

Author(s):

Nobuaki Takahashi ◽

Teruyasu Mizoguchi ◽

Tsubasa Nakagawa ◽

Tetsuya Tohei ◽

Isao Sakaguchi ◽

...

Keyword(s):

Mass Spectroscopy ◽

First Principles ◽

Secondary Ion Mass Spectroscopy ◽

First Principles Study ◽

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Development of secondary ion mass spectroscopy using medium energy C60 ion impact

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2008.03.019 ◽

2008 ◽

Vol 266 (10) ◽

pp. 2450-2452 ◽

Author(s):

K. Hirata ◽

Y. Saitoh ◽

A. Chiba ◽

M. Adachi ◽

K. Yamada ◽

...

Keyword(s):

Mass Spectroscopy ◽

Medium Energy ◽

Secondary Ion Mass Spectroscopy ◽

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Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

MRS Proceedings ◽

10.1557/proc-809-b8.6 ◽

2004 ◽

Vol 809 ◽

Author(s):

Mudith S. A. Karunaratne ◽

Janet M. Bonar ◽

Jing Zhang ◽

Arthur F. W. Willoughby

Keyword(s):

Computer Simulation ◽

Point Defect ◽

Mass Spectroscopy ◽

Diffusion Coefficients ◽

Secondary Ion Mass Spectroscopy ◽

Annealing Conditions ◽

Defect Injection ◽

Before And After ◽

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

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Secondary ion counting for surface-sensitive chemical analysis of organic compounds using time-of-flight secondary ion mass spectroscopy with cluster ion impact ionization

Review of Scientific Instruments ◽

10.1063/1.3541799 ◽

2011 ◽

Vol 82 (3) ◽

pp. 033101 ◽

Author(s):

K. Hirata ◽

Y. Saitoh ◽

A. Chiba ◽

K. Yamada ◽

Y. Takahashi ◽

...

Keyword(s):

Chemical Analysis ◽

Organic Compounds ◽

Mass Spectroscopy ◽

Impact Ionization ◽

Time Of Flight ◽

Secondary Ion Mass Spectroscopy ◽

Cluster Ion ◽

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Quantification of nitrogen impurity and estimated Orowan strengthening through secondary ion mass spectroscopy in aluminum cryomilled for extended durations

Materials Science and Engineering A ◽

10.1016/j.msea.2015.09.007 ◽

2015 ◽

Vol 648 ◽

pp. 412-417 ◽

Author(s):

Clara Hofmeister ◽

Mikhail Klimov ◽

Tim Deleghanty ◽

Kyu Cho ◽

Yongho Sohn

Keyword(s):

Mass Spectroscopy ◽

Secondary Ion Mass Spectroscopy ◽

Nitrogen Impurity ◽

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Carbon Enhancement of SiO[sub 2] Nucleation in Buried Oxide Synthesis Computer Simulations and Secondary Ion Mass Spectroscopy Depth Profiling

Journal of The Electrochemical Society ◽

10.1149/1.1362550 ◽

2001 ◽

Vol 148 (5) ◽

pp. F92 ◽

Author(s):

A. A. Efremov ◽

V. G. Litovchenko ◽

G. Ph. Romanova ◽

A. V. Sarikov ◽

C. Claeys

Keyword(s):

Computer Simulations ◽

Mass Spectroscopy ◽

Depth Profiling ◽

Secondary Ion Mass Spectroscopy ◽

Buried Oxide ◽

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Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

ACS Symposium Series - Metallization of Polymers ◽

10.1021/bk-1990-0440.ch022 ◽

1990 ◽

pp. 297-311 ◽

Author(s):

B. K. Furman ◽

S. Purushothaman ◽

E. Castellani ◽

S. Renick ◽

D. Neugroshl

Keyword(s):

Mass Spectroscopy ◽

Secondary Ion Mass Spectroscopy ◽

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Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy

Journal of Luminescence ◽

10.1016/s0022-2313(98)00086-6 ◽

1998 ◽

Vol 80 (1-4) ◽

pp. 147-152 ◽

Author(s):

M Fried ◽

O Polgár ◽

T Lohner ◽

S Strehlke ◽

C Levy-Clement

Keyword(s):

Porous Silicon ◽

Comparative Study ◽

Mass Spectroscopy ◽

Spectroscopic Ellipsometry ◽

Secondary Ion Mass Spectroscopy ◽

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Chemistry of Metal and Alloy Adherends by Secondary Ion Mass Spectroscopy, Ion Scattering Spectroscopy, and Auger Electron Spectroscopy

Surface Analysis Techniques for Metallurgical Applications ◽

10.1520/stp39064s ◽

2009 ◽

pp. 86-86-15

Author(s):

WL Baun ◽

NT McDevitt ◽

JS Solomon

Keyword(s):

Auger Electron Spectroscopy ◽

Mass Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Ion Scattering ◽

Secondary Ion Mass Spectroscopy ◽

Ion Scattering Spectroscopy ◽

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Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations

Selected Topics in Group IV and II–VI Semiconductors ◽

10.1016/b978-0-444-82411-0.50015-2 ◽

1996 ◽

pp. 31-35

Author(s):

H.P. Zeindl ◽

S. Nilsson ◽

J. Klatt ◽

D. Krüger ◽

R. Kurps

Keyword(s):

Quantum Wells ◽

Mass Spectroscopy ◽

Molecular Beam ◽

Single Quantum ◽

Secondary Ion Mass Spectroscopy ◽

Molecular Beam Epitaxial ◽

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Phosphorus Behavior in Heavily Phosphorus-Doped Silicon Surfaces due to Annealing. X-Ray Photoelectron Spectroscopy and Secondary Ion Mass Spectroscopy.

Shinku ◽

10.3131/jvsj.38.295 ◽

1995 ◽

Vol 38 (3) ◽

pp. 295-298 ◽

Author(s):

Wen Biao YING ◽

Yusuke MIZOKAWA ◽

Yoshitomo KAMIURA ◽

Yong Bing YU ◽

Masafumi NISHIMATSU ◽

...

Keyword(s):

Mass Spectroscopy ◽

Photoelectron Spectroscopy ◽

Silicon Surfaces ◽

Secondary Ion Mass Spectroscopy ◽

X Ray ◽

Doped Silicon ◽

Phosphorus Doped ◽

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