Photo-doped carrier dynamics by two-color pump–probe time-resolved Raman scattering measurement in Ge

2000 ◽  
Vol 87-89 ◽  
pp. 920-922
Author(s):  
Shingo Saito ◽  
Tohru Suemoto
Keyword(s):  
Raman Scattering ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Pump Probe ◽  
Scattering Measurement

SPATIAL AND MOMENTUM DIFFUSION OF ENERGETIC HOLES IN InAs BY TWO COLOR PUMP-PROBE METHOD

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3932-3935
Author(s):  
SHINGO SAITO ◽  
TOHRU SUEMOTO
Keyword(s):  
Raman Scattering ◽  
Second Harmonic ◽  
Harmonic Excitation ◽  
Probe Method ◽  
Raman Intensity ◽  
Time Resolved ◽  
Pump Probe ◽  
Electronic Raman Scattering ◽  
Hole Band ◽  
Scattering Measurement

Time-resolved electronic Raman scattering of a direct-gap semiconductor, InAs was measured by pump-probe method. We used fundamental pulses and second harmonic pulses of mode-locked Ti:S laser as excitation sources, and fundamental pulses as the probe beam. The time-resolved Raman intensities corresponding to the transition from heavy hole band to light hole band showed different features depending on the excitation energy. In case of the fundamental beam excitation, Raman intensity decreased monotonously. On the contrary, Raman intensity under the second harmonic excitation showed a maximum at a few picosecond after excitation. From the analysis, the temperature of photo-excited hole changed from 5300K to 1300K in 2psec and from 1300K to RT within 4 psec under the second harmonics excitation. It has been shown that the time-resolved Raman scattering measurement is a useful tool to investigate dynamics of the energetic carriers.

Time‐resolved Raman scattering measurement of photoexcited plasmon in GaP crystals

1986 ◽  
Vol 60 (9) ◽  
pp. 3303-3308 ◽  
Author(s):  
H. Yugami ◽  
S. Nakashima ◽  
Y. Oka ◽  
M. Hangyo ◽  
A. Mitsuishi
Keyword(s):  
Raman Scattering ◽  
Time Resolved ◽  
Scattering Measurement

Femtosecond Carrier Dynamics in Nanocrystalline Silicon Films: The Effect of the Degree of Crystallinity

2001 ◽  
Vol 664 ◽  
Author(s):  
K.E. Myers ◽  
Q. Wang ◽  
S.L. Dexheimer
Keyword(s):  
Near Infrared ◽  
Heterogeneous Material ◽  
Nanocrystalline Silicon ◽  
Carrier Dynamics ◽  
Degree Of Crystallinity ◽  
Time Resolved ◽  
Carrier Relaxation ◽  
Pump Probe ◽  
Silicon Thin Films ◽  
The Degree Of Crystallinity

ABSTRACTWe present studies of the ultrafast dynamics of photoexcited carriers in HWCVD nanocrystalline silicon thin films to address the underlying physics of carrier relaxation and recombination processes in this heterogeneous material. The degree of crystallinity is controlled by varying the H-dilution during deposition, yielding materials with increasingly larger grain size and crystalline fraction at higher dilution values. Time-resolved measurements of the carrier dynamics were made using a femtosecond pump-probe method, in which a short pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in the optical properties as a function of the pump-probe delay time. Photoexcitation of carriers with pulses 35 fs in duration centered at 1.55 eV results in a net induced absorbance signal in the near-infrared that is analyzed in terms of a multi-component response that includes contributions from the silicon crystallites and the amorphous matrix.

Nonequilibrium Carrier Dynamics Studied in Er, O-Codoped GaAs by Pump-Probe Reflection Technique

2005 ◽  
Vol 866 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Kazuhiko Nakamura ◽  
Shoichi Takemoto ◽  
Yoshikazu Terai ◽  
Masato Suzuki ◽  
...  
Keyword(s):  
Gradual Increase ◽  
Carrier Dynamics ◽  
Single Atom ◽  
Time Resolved ◽  
Pump Probe ◽  
Pump And Probe ◽  
Steep Decrease ◽  
Luminescence Time ◽  
Atom Configuration ◽  
Nonequilibrium Carriers

AbstractCarrier dynamics in Er,O-codoped GaAs (GaAs:Er,O) have been systematically investigated by means of a pump and probe reflection technique with a mode-locked Ti:sapphire laser. In GaAs:Er,O, it has been found that the codoping produces a single atom configuration (Er-20 configuration) as an Er atom located at the Ga sublattice with two adjacent O atoms together with two As atoms, resulting in extremely strong Er luminescence. Time-resolved reflectivity of GaAs:Er,O exhibited an abrupt increase in amplitude, followed by a steep decrease to negative in less than 1 ps and then a gradual increase in approximately 100 ps. The steep decrease is due to bandgap renormalization. The gradual increase in reflectivity depended strongly on Er concentration, indicating that a trap induced by Er and O codoping plays an important role in dynamics of nonequilibrium carriers in GaAs:Er,O.

scholarly journals Bases for time-resolved probing of transient carrier dynamics by optical pump–probe scanning tunneling microscopy

Nanoscale ◽  
2013 ◽  
Vol 5 (19) ◽  
pp. 9170 ◽  
Author(s):  
Munenori Yokota ◽  
Shoji Yoshida ◽  
Yutaka Mera ◽  
Osamu Takeuchi ◽  
Haruhiro Oigawa ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Carrier Dynamics ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe

Pump-Probe Measurements Using Silicon Nanocrystal Waveguides

2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman
Keyword(s):  
Probe Beam ◽  
Time Resolution ◽  
Pump Beam ◽  
Silicon Nanocrystals ◽  
Continuous Wave ◽  
Optical Gain ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe ◽  
Probe Measurements

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.

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