Radiation damage of UO2 by high-energy heavy ions

Beams of heavy ions from particle accelerators are used to produce radiation damage in metal alloys. The damaged layer extends several microns below the surface of the specimen with the maximum damage and depth dependent upon the energy of the ions, type of ions, and target material. Using 4 MeV heavy ions from a Van de Graaff accelerator causes peak damage approximately 1 μm below the specimen surface. To study this area, it is necessary to remove a thickness of approximately 1 μm of damaged metal from the surface (referred to as “sectioning“) and to electropolish this region to electron transparency from the unirradiated surface (referred to as “backthinning“). We have developed electropolishing techniques to obtain electron transparent regions at any depth below the surface of a standard TEM disk. These techniques may be applied wherever TEM information is needed at a specific subsurface position.

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COMPUTER SIMULATION OF RADIATION DAMAGE IN POTASSIUM HALIDES BY LOW AND HIGH ENERGY RECOILS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:19767108 ◽

1976 ◽

Vol 37 (C7) ◽

pp. C7-486-C7-486

Author(s):

K. RÖSSLER ◽

F. W. FELIX ◽

M. MÜLLER

Keyword(s):

Computer Simulation ◽

Radiation Damage ◽

High Energy ◽

Potassium Halides

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Irradiation Induced Changes in Semiconducting Thin Films

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.341.181 ◽

2013 ◽

Vol 341 ◽

pp. 181-210 ◽

Cited By ~ 1

Author(s):

S.K. Tripathi

Keyword(s):

Thin Films ◽

Solar Cells ◽

Heavy Ions ◽

Semiconductor Device ◽

High Energy ◽

Device Fabrication ◽

Electrical Performance ◽

Radiation Environment ◽

Extended Defects ◽

Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

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