Irradiation Induced Changes in Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

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Optical and Electrical Analyses of Thallium Sulphide Thin Films

Jordan Journal of Physics ◽

10.47011/14.3.7 ◽

2021 ◽

Vol 14 (3) ◽

pp. 249-253

Keyword(s):

Thin Films ◽

Solar Cells ◽

Soda Lime ◽

High Energy ◽

Window Layer ◽

Soda Lime Glass ◽

Energy Band Gap ◽

Thallium Chloride ◽

Light Region ◽

Silicon And Germanium

Abstract: In this paper, suitability of thallium sulphide films were investigated as an alternative to conventional silicon and germanium that were used as window layers in solar cells. Thin films were deposited on soda lime glass (SLG) substrates in a chemical bath containing Thallium Chloride (TlCl2) and Thiourea (NH2)2CS which was conditioned at 80 ºC for about 5 hours to deposit the films. Effects of annealing on the film samples at 300 ºC and 350 ºC were studied respectively by use of UV-VIS Avantes electrophotometer and Four-Point-Probe (FPP) machine in the light region with wavelength range from 200 nm to 1000 nm. The results obtained suggest that the thin films obtained are good materials for optoelectronics. The absorption spectra exhibited a relatively high energy band-gap. Materials of this nature are good for window layers which serve as passage to the absorber layer where needed charge carriers are produced. Keywords: Thin film, Thallium Sulphide, Window layer, Optoelectronics, Solar cells.

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Imaging Electron Transport across Grain Boundaries in an Integrated Electron and Atomic Force Microscopy Platform: Application to Polycrystalline Silicon Solar Cells

MRS Proceedings ◽

10.1557/proc-1153-a15-03 ◽

2009 ◽

Vol 1153 ◽

Cited By ~ 4

Author(s):

Manuel J Romero ◽

Fude Liu ◽

Oliver Kunz ◽

Johnson Wong ◽

Chun-Sheng Jiang ◽

...

Keyword(s):

Thin Films ◽

Atomic Force Microscopy ◽

Solar Cells ◽

Electron Transport ◽

Grain Boundaries ◽

Polycrystalline Silicon ◽

High Energy ◽

Dominant Factor ◽

Force Microscopy ◽

Atomic Force

AbstractWe have investigated the local electron transport in polycrystalline silicon (pc-Si) thin-films by atomic force microscopy (AFM)-based measurements of the electron-beam-induced current (EBIC). EVA solar cells are produced at UNSW by <i>EVAporation</i> of a-Si and subsequent <i>solid-phase crystallization</i>–a potentially cost-effective approach to the production of pc-Si photovoltaics. A fundamental understanding of the electron transport in these pc-Si thin films is of prime importance to address the factors limiting the efficiency of EVA solar cells. EBIC measurements performed in combination with an AFM integrated inside an electron microscope can resolve the electron transport across individual grain boundaries. AFM-EBIC reveals that most grain boundaries present a high energy barrier to the transport of electrons for both p-type and n-type EVA thin-films. Furthermore, for p-type EVA pc-Si, in contrast with n-type, charged grain boundaries are seen. Recombination at grain boundaries seems to be the dominant factor limiting the efficiency of these pc-Si solar cells.

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Characteristics of Aluminum-Doped Zinc Oxide Films Grown Using Facing Target Sputtering for Transparent Electrode of Heterojunction Solar Cells

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.18928 ◽

2021 ◽

Vol 21 (3) ◽

pp. 1799-1803

Author(s):

Yujin Kim ◽

Sangmo Kim ◽

Jeongsoo Hong ◽

Kyung Hwan Kim

Keyword(s):

Thin Film ◽

Thin Films ◽

Zinc Oxide ◽

Solar Cells ◽

Transparent Electrode ◽

High Energy ◽

Heterojunction Solar Cells ◽

Aluminum Doped Zinc Oxide ◽

Facing Target Sputtering ◽

High Energy Particles

In general sputtering, material characteristics can be degraded by high-energy particles located inside the plasma owing to the thin film surface. However, facing target sputtering (FTS) can be used to produce high-quality thin films through maximum control over substrate damage and the reduction of layer damage caused by high-energy particles impacting the substrate. Transparent conductive oxides (TCOs) are being applied to a variety of technologies, including displays and solar cells. The typical transparent electrode material is indium tin oxide (ITO), which contains rare and expensive raw materials. Aluminum-doped zinc oxide (AZO) has attracted increasing attention as a substitute to ITO because it is composed of abundantly available resources and is generally inexpensive. In this study, an AZO thin film was prepared using an FTS system for heterojunction solar cells. The effects of the deposition substrate temperature on the resulting electrical conductivity, structural properties, and optical properties of the AZO thin films were examined.

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Benefits of Zero Degree Single Wafer High Energy Implants for Advanced Semiconductor Device Fabrication

10.1063/1.3033608 ◽

2008 ◽

Author(s):

Woojin Lee ◽

Thirumal Thanigaivelan ◽

Hans-Joachim Gossmann ◽

Russell Low ◽

Benjamin Colombeau ◽

...

Keyword(s):

Semiconductor Device ◽

High Energy ◽

Device Fabrication ◽

Zero Degree

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Current Injection Effects on the Electrical Performance of 3J Solar Cells Irradiated with Low and High Energy Protons

2006 IEEE 4th World Conference on Photovoltaic Energy Conference ◽

10.1109/wcpec.2006.279846 ◽

2006 ◽

Author(s):

Takeshi Ohshima ◽

Haruki Miyamoto ◽

Mitsuru Imaizumi ◽

Chiharu Morioka ◽

Shirou Kawakita ◽

...

Keyword(s):

Solar Cells ◽

High Energy ◽

Current Injection ◽

Electrical Performance

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Effects of Progressive SiNx Films on the Performance of Polycrystalline Silicon Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.724-725.151 ◽

2013 ◽

Vol 724-725 ◽

pp. 151-155

Author(s):

Peng Wang ◽

Xian Fang Gou ◽

Wei Tao Fan ◽

Chen Cai Sun

Keyword(s):

Thin Films ◽

Solar Cells ◽

Polycrystalline Silicon ◽

Surface Passivation ◽

Crystalline Silicon ◽

Chemical Vapor ◽

Open Circuit ◽

Electrical Performance ◽

Silicon Solar Cells ◽

Chemical Vapor Deposition Method

In order to improving the conversion efficiency of polycrystalline silicon solar cells, progressive SiNx thin films were deposited on the surface via Roth&Rau plasma-enhanced chemical vapor deposition method. The effects of progressive SiNx thin films, such as surface passivation, anti-reflection, and electrical performance were systematically investigated. Compared with monolayer films, progressive SiNx thin films have better anti-reflective properties in the wavelength range of 300-500 nm, resulting in improvement of the short wavelength absorption of the crystalline silicon solar cells. Moreover, the bottom of progressive SiNx thin films with high refractive index enhances the surface passivation. Thus, higher open-circuit voltage and fill factor could be obtained by this technique.

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Processing and Properties of Cw Laser-Recrystallized Silicon Films on Amorphous Substrates

MRS Proceedings ◽

10.1557/proc-1-463 ◽

1980 ◽

Vol 1 ◽

Cited By ~ 2

Author(s):

N. M. Johnson ◽

D. K. Biegelsen ◽

M. D. Moyer

Keyword(s):

Thin Films ◽

Semiconductor Device ◽

Field Effect Transistors ◽

Single Crystal Silicon ◽

Silicon Layer ◽

Device Fabrication ◽

Control Surface ◽

Crystal Silicon ◽

Cw Laser ◽

Laser Recrystallization

ABSTRACTCW laser recrystallization has been used to process silicon thin films as an integral step in semiconductor device fabrication. On continuous films of polycrystalline silicon, a silicon-nitride encapsulant is used to control surface morphology during laser recrystallization. For thin films on bulk glass substrates it is necessary to pattern the silicon layer in order to minimize microcracking as well as to control recrystallization. Over single crystal silicon substrates, test devices have been fabricated in silicon islands on dual-dielectric layers. Materials and device evaluation included TEM, current-voltage, capacitance-voltage, and EBIC measurements, and the test devices consisted of p-n junction diodes, MOS capacitors, and MOS field-effect transistors.

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