Conduction and valence band offsets in GaAlAs/GaAs/GaAlAs quantum wells from photo-luminescence and deep level transient spectroscopy under hydrostatic pressure

1999 ◽  
Vol 113 (4) ◽  
pp. 201-206 ◽  
Author(s):  
A.K Saxena
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Valence Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Photo Luminescence ◽  
Band Offsets ◽  
Transient Spectroscopy

scholarly journals Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

1996 ◽  
Vol 68 (25) ◽  
pp. 3591-3593 ◽  
Author(s):  
P. F. Baude ◽  
M. A. Haase ◽  
G. M. Haugen ◽  
K. K. Law ◽  
T. J. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Quantum ◽  
Band Offsets ◽  
Transient Spectroscopy

scholarly journals Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs

1992 ◽  
Vol 82 (5) ◽  
pp. 841-844
Author(s):  
A. Babiński ◽  
J. Przybytek ◽  
M. Baj ◽  
P. Omling ◽  
L. Samuelson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Transient Spectroscopy

Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy

1995 ◽  
Vol 78 (9) ◽  
pp. 5439-5447 ◽  
Author(s):  
O. Chretien ◽  
R. Apetz ◽  
L. Vescan ◽  
A. Souifi ◽  
H. Lüth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

1996 ◽  
Vol 54 (4) ◽  
pp. 2662-2666 ◽  
Author(s):  
Jian-hong Zhu ◽  
Da-wei Gong ◽  
Bo Zhang ◽  
Fang Lu ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
Hole Confinement

Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

2016 ◽  
Vol 27 (7) ◽  
pp. 075705 ◽  
Author(s):  
Victor-Tapio Rangel-Kuoppa ◽  
Alexander Tonkikh ◽  
Nikolay Zakharov ◽  
Christian Eisenschmidt ◽  
Peter Werner
Keyword(s):  
Valence Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Valence Band Offset ◽  
Transient Spectroscopy

Interfacial defects inSi1−xGex/Si quantum wells detected by deep-level transient spectroscopy

1994 ◽  
Vol 50 (24) ◽  
pp. 18226-18230 ◽  
Author(s):  
Qinhua Wang ◽  
Fang Lu ◽  
Dawei Gong ◽  
Xiangjun Chen ◽  
Jianbao Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interfacial Defects ◽  
Transient Spectroscopy
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