Conduction-band offsets in pseudomorphicInxGa1−xAs/Al0.2Ga0.8As quantum wells (0.07≤x≤0.18) measured by deep-level transient spectroscopy

1989 ◽  
Vol 40 (2) ◽  
pp. 1058-1063 ◽  
Author(s):  
N. Debbar ◽  
Dipankar Biswas ◽  
Pallab Bhattacharya
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offsets ◽  
Transient Spectroscopy

scholarly journals Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

1996 ◽  
Vol 68 (25) ◽  
pp. 3591-3593 ◽  
Author(s):  
P. F. Baude ◽  
M. A. Haase ◽  
G. M. Haugen ◽  
K. K. Law ◽  
T. J. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Quantum ◽  
Band Offsets ◽  
Transient Spectroscopy

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
M.C. Ridgway ◽  
S.A. Goodman ◽  
G. Myburg
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
Thermally Stable ◽  
Vacancy Clusters ◽  
Transient Spectroscopy ◽  
Low Energy Ions

AbstractWe report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy

1995 ◽  
Vol 78 (9) ◽  
pp. 5439-5447 ◽  
Author(s):  
O. Chretien ◽  
R. Apetz ◽  
L. Vescan ◽  
A. Souifi ◽  
H. Lüth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

scholarly journals Characterization of traps in SiC/SiO2interfaces close to the conduction band by deep-level transient spectroscopy

2015 ◽  
Vol 54 (11) ◽  
pp. 111301 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Mitsuru Sometani ◽  
Kenji Fukuda ◽  
Hajime Okumura ◽  
Tsunenobu Kimoto
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

1996 ◽  
Vol 54 (4) ◽  
pp. 2662-2666 ◽  
Author(s):  
Jian-hong Zhu ◽  
Da-wei Gong ◽  
Bo Zhang ◽  
Fang Lu ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
Hole Confinement
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