scholarly journals Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

1996 ◽  
Vol 68 (25) ◽  
pp. 3591-3593 ◽  
Author(s):  
P. F. Baude ◽  
M. A. Haase ◽  
G. M. Haugen ◽  
K. K. Law ◽  
T. J. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Quantum ◽  
Band Offsets ◽  
Transient Spectroscopy

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

2006 ◽  
Vol 957 ◽  
Author(s):  
Yahya Alivov ◽  
Xiao Bo ◽  
Fan Qian ◽  
Daniel Johnstone ◽  
Cole Litton ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Band Offset ◽  
Measured Temperature ◽  
Temperature Dependent ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Deep level transient spectroscopy of AlxGa1 xAs/GaAs single-quantum-well lasers

2004 ◽  
Vol 19 (7) ◽  
pp. 897-901 ◽  
Author(s):  
K Zdansky ◽  
V Gorodynskyy ◽  
J Kosíková ◽  
A Rudra ◽  
E Kapon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Transient Spectroscopy

Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
M.C. Ridgway ◽  
S.A. Goodman ◽  
G. Myburg
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
Thermally Stable ◽  
Vacancy Clusters ◽  
Transient Spectroscopy ◽  
Low Energy Ions

AbstractWe report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

A study on the energy bands of multi-quantum wells in the quantum cascade laser structure by deep-level transient spectroscopy

2006 ◽  
Vol 21 (8) ◽  
pp. 1069-1072 ◽  
Author(s):  
Jin Soak Kim ◽  
Eun Kyu Kim ◽  
Il Ki Han ◽  
Jin Dong Song ◽  
Jung Il Lee ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Cascade Laser ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Laser Structure ◽  
Energy Bands ◽  
Quantum Cascade ◽  
Transient Spectroscopy

Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy

1995 ◽  
Vol 78 (9) ◽  
pp. 5439-5447 ◽  
Author(s):  
O. Chretien ◽  
R. Apetz ◽  
L. Vescan ◽  
A. Souifi ◽  
H. Lüth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

scholarly journals Characterization of traps in SiC/SiO2interfaces close to the conduction band by deep-level transient spectroscopy

2015 ◽  
Vol 54 (11) ◽  
pp. 111301 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Mitsuru Sometani ◽  
Kenji Fukuda ◽  
Hajime Okumura ◽  
Tsunenobu Kimoto
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy
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