Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate
2002 ◽
Vol 46
(1)
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pp. 69-73
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2014 ◽
2016 ◽
Vol 55
(5)
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pp. 056502
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2001 ◽
2009 ◽
Vol 2009
(01)
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pp. P01038
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