A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages

K.G. Anil; S. Mahapatra; I. Eisele

doi:10.1016/s0038-1101(02)00458-6

A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages

Solid-State Electronics ◽

10.1016/s0038-1101(02)00458-6 ◽

2003 ◽

Vol 47 (6) ◽

pp. 995-1001 ◽

Cited By ~ 6

Author(s):

K.G. Anil ◽

S. Mahapatra ◽

I. Eisele

Keyword(s):

Experimental Investigation ◽

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c038 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C038

Author(s):

Po-Chin Huang ◽

Ting-Kuo Kang ◽

Bo-Chin Wang ◽

San-Lein Wu ◽

Shoou-Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Sige

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New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.3763 ◽

1992 ◽

Vol 31 (Part 1, No. 12A) ◽

pp. 3763-3769 ◽

Cited By ~ 1

Author(s):

Koichi Fukuda ◽

Hermann-Josef Peifer ◽

Bernd Meinerzhagen ◽

Rainer Thoma ◽

Walter L. Engl

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Efficient Treatment

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Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5691 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5691-5694 ◽

Cited By ~ 2

Author(s):

Satoshi Matsumoto ◽

Masato Mino

Keyword(s):

Thin Film ◽

Experimental Investigation ◽

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2909082 ◽

2008 ◽

Vol 92 (15) ◽

pp. 153501 ◽

Cited By ~ 3

Author(s):

Ting-Kuo Kang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Integration Process of Impact-Ionization Metal–Oxide–Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.122 ◽

2007 ◽

Vol 46 (1) ◽

pp. 122-124 ◽

Cited By ~ 12

Author(s):

Woo Young Choi ◽

Jong Duk Lee ◽

Byung-Gook Park

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Integration Process ◽

Tunneling Field Effect Transistors

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70-nm impact-ionization metal-oxide-semiconductor (I-MOS) devices integrated with tunneling field-effect transistors (TFETs)

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. ◽

10.1109/iedm.2005.1609519 ◽

2006 ◽

Cited By ~ 22

Author(s):

Woo Young Choi ◽

Jae Young Song ◽

Jong Duk Lee ◽

Young June Park ◽

Byung-Gook Park

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mos Devices ◽

Tunneling Field Effect Transistors

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Experimental Study of Impact Ionization Phenomena in Sub-0.1 µmSi Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.882 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 882-886 ◽

Cited By ~ 2

Author(s):

Atsushi Hori ◽

Akira Hiroki ◽

Kaori Moriyama Akamatsu ◽

Shinji Odanaka

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Impact Ionization in $\bf 0.1 {\mbi \mu }{\bf m}$ Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l345 ◽

1995 ◽

Vol 34 (Part 2, No. 3B) ◽

pp. L345-L348 ◽

Cited By ~ 3

Author(s):

Hajime Kurata ◽

Yasuo Nara ◽

Toshihiro Sugii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2664 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2664-2667 ◽

Cited By ~ 4

Author(s):

Ting-Kuo Kang ◽

Po-Chin Huang ◽

Yu-Huan Sa ◽

San-Lein Wu ◽

Shoou-Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Experimental investigation of silicon‐on‐insulator metal‐oxide‐ semiconductor field‐effect transistors at high magnetic field and low temperature

Journal of Applied Physics ◽

10.1063/1.354124 ◽

1993 ◽

Vol 74 (1) ◽

pp. 408-415 ◽

Cited By ~ 7

Author(s):

T. Ouisse ◽

S. Cristoloveanu ◽

D. K. Maude

Keyword(s):

Magnetic Field ◽

Experimental Investigation ◽

Low Temperature ◽

Metal Oxide ◽

High Magnetic Field ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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