Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors

Satoshi Matsumoto; Masato Mino

doi:10.1143/jjap.46.5691

Experimental Investigation of Pattern Layout Effect on Radio-Frequency Performance of Thin-Film Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.5691 ◽

2007 ◽

Vol 46 (9A) ◽

pp. 5691-5694 ◽

Cited By ~ 2

Author(s):

Satoshi Matsumoto ◽

Masato Mino

Keyword(s):

Thin Film ◽

Experimental Investigation ◽

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Cited By ~ 11

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l855 ◽

1998 ◽

Vol 37 (Part 2, No. 7B) ◽

pp. L855-L858 ◽

Cited By ~ 8

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Makoto Takamiya ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Thin Film Silicon

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Investigation on the Fully- and Partially-Depleted Thin-Film Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect-Transistors for High-Frequency Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6115 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6115-6118 ◽

Cited By ~ 1

Author(s):

Satoshi Matsumoto ◽

Tatsuo Sakai ◽

Toshiaki Yachi

Keyword(s):

Thin Film ◽

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Thin Film Silicon

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585950 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2954

Author(s):

P. R. de la Houssaye

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Film Silicon

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) for radio frequency (RF) and analogue applications

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.2.275 ◽

2014 ◽

pp. 275-317

Author(s):

J.-P. Raskin ◽

M. Emam

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c041 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C041

Author(s):

Sheng-Chun Wang ◽

Pin Su ◽

Kun-Ming Chen ◽

Sheng-Yi Huang ◽

Cheng-Chou Hung ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Dynamic Threshold ◽

Small Signal

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Impact of Silicon-on-Insulator Substrate Parameters on the Radio Frequency Performance of Quasi-Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2560 ◽

2003 ◽

Vol 42 (Part 1, No. 5A) ◽

pp. 2560-2563

Author(s):

Satoshi Matsumoto ◽

Yasushi Hiraoka ◽

Toshiaki Yachi

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Insulator Substrate

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