Experimental Study of Impact Ionization Phenomena in Sub-0.1 µmSi Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

Atsushi Hori; Akira Hiroki; Kaori Moriyama Akamatsu; Shinji Odanaka

doi:10.1143/jjap.35.882

Experimental Study of Impact Ionization Phenomena in Sub-0.1 µmSi Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.882 ◽

1996 ◽

Vol 35 (Part 1, No. 2B) ◽

pp. 882-886 ◽

Cited By ~ 2

Author(s):

Atsushi Hori ◽

Akira Hiroki ◽

Kaori Moriyama Akamatsu ◽

Shinji Odanaka

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.99 ◽

2008 ◽

Vol 47 (1) ◽

pp. 99-103 ◽

Cited By ~ 18

Author(s):

Yoshifumi Nishi ◽

Atsuhiro Kinoshita ◽

Daisuke Hagishima ◽

Junji Koga

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4885765 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263507 ◽

Cited By ~ 7

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Ryosho Nakane ◽

Osamu Ichikawa ◽

Takenori Osada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Vertical Scaling

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Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

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Experimental study of uniaxial stress effects on Coulomb-limited mobility in p-type metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2807832 ◽

2007 ◽

Vol 91 (20) ◽

pp. 203506 ◽

Cited By ~ 4

Author(s):

Shigeki Kobayashi ◽

Masumi Saitoh ◽

Yukio Nakabayashi ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Uniaxial Stress ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Limited Mobility ◽

Stress Effects ◽

P Type

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Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2013.2265435 ◽

2013 ◽

Vol 12 (4) ◽

pp. 621-628 ◽

Cited By ~ 21

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sung-Hoon Lee ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.094101 ◽

2011 ◽

Vol 50 (9R) ◽

pp. 094101 ◽

Cited By ~ 7

Author(s):

Naotoshi Kadotani ◽

Teruyuki Ohashi ◽

Tsunaki Takahashi ◽

Shunri Oda ◽

Ken Uchida

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Accumulation Mode

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A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages

Solid-State Electronics ◽

10.1016/s0038-1101(02)00458-6 ◽

2003 ◽

Vol 47 (6) ◽

pp. 995-1001 ◽

Cited By ~ 6

Author(s):

K.G. Anil ◽

S. Mahapatra ◽

I. Eisele

Keyword(s):

Experimental Investigation ◽

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c038 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C038

Author(s):

Po-Chin Huang ◽

Ting-Kuo Kang ◽

Bo-Chin Wang ◽

San-Lein Wu ◽

Shoou-Jinn Chang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Sige

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New Efficient Treatment of Impact Ionization in Submicron Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.3763 ◽

1992 ◽

Vol 31 (Part 1, No. 12A) ◽

pp. 3763-3769 ◽

Cited By ~ 1

Author(s):

Koichi Fukuda ◽

Hermann-Josef Peifer ◽

Bernd Meinerzhagen ◽

Rainer Thoma ◽

Walter L. Engl

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Efficient Treatment

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Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2909082 ◽

2008 ◽

Vol 92 (15) ◽

pp. 153501 ◽

Cited By ~ 3

Author(s):

Ting-Kuo Kang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Impact Ionization ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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