Comment on the paper by Y. Miyake, K. Shimomura, A.P. Mills Jr., J.P. Marangos, K. Nagamine “Thermionic emission of hydrogen isotopes (Mu, H, D and T) from W and interpretation of a role of the hot W as an atomic hydrogen source”

2000 ◽  
Vol 470 (1-2) ◽  
pp. 186-188 ◽  
Author(s):  
A. Winkler
Keyword(s):  
Atomic Hydrogen ◽  
Thermionic Emission ◽  
Hydrogen Isotopes

Thermionic emission of hydrogen isotopes (Mu, H, D and T) from W and interpretation of a role of the hot W as an atomic hydrogen source

1999 ◽  
Vol 433-435 ◽  
pp. 785-789 ◽  
Author(s):  
Y. Miyake ◽  
K. Shimomura ◽  
A.P. Mills ◽  
J.P. Marangos ◽  
K. Nagamine
Keyword(s):  
Atomic Hydrogen ◽  
Thermionic Emission ◽  
Hydrogen Isotopes

Role of atomic hydrogen diffusion in a hydrogen flame

2007 ◽  
Vol 43 (2) ◽  
pp. 125-131 ◽  
Author(s):  
V. A. Bunev ◽  
V. N. Panfilov ◽  
V. S. Babkin
Keyword(s):  
Atomic Hydrogen ◽  
Hydrogen Diffusion ◽  
Hydrogen Flame

A novel assessment of the role of the methyl radical and water formation channel in the CH3OH + H reaction

2017 ◽  
Vol 19 (36) ◽  
pp. 24467-24477 ◽  
Author(s):  
Flávio O. Sanches-Neto ◽  
Nayara D. Coutinho ◽  
Valter H. Carvalho-Silva
Keyword(s):  
Atomic Hydrogen ◽  
Methyl Radical ◽  
Water Formation

A number of experimental and theoretical papers accounted almost exclusively for two channels in the reaction of atomic hydrogen with methanol. However, several astrochemical studies claimed the importance of another channel for this reaction.

scholarly journals The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Thermionic Emission ◽  
Analytical Description ◽  
Theoretical Explanation ◽  
The Impact

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 425-428 ◽  
Author(s):  
R.R Ciechonski ◽  
Samuele Porro ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova
Keyword(s):  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Depth Profiling ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Transient Spectroscopy ◽  
State Resistance ◽  
Thick Layers

Specific on-resistance Ron estimated from current density-voltage characteristics of Schottky diodes on thick layers exhibits variations from tens of mW.cm2 to tens of W.cm2 for different doping levels. In order to understand the occurrence of high on-state resistance, Schottky barrier heights were first estimated for both forward and reverse bias with the application of thermionic emission theory and were in agreement with a literature reported values. Decrease in mobility with the temperature was observed and its dependencies of T–1.3 and T–2.0 for moderately doped and low doped samples respectively were estimated. From deep level measurements by Minority Carrier Transient Spectroscopy, an influence of shallow boron related levels and D-center on dependence of on-state resistance was observed, being more pronounced in low doped samples. Similar tendency was observed in depth profiling of Ron. This suggests a major role of boron in a compensation mechanism thus resulting in high Ron.

scholarly journals The atomic hydrogen/molecular cloud association: an unavoidable relationship

1991 ◽  
Vol 147 ◽  
pp. 37-40
Author(s):  
G. Joncas
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Clouds ◽  
Large Scale ◽  
Young Stars ◽  
Physical Processes ◽  
Star Forming ◽  
Dark Clouds ◽  
Star Forming Regions ◽  
The Impact

The presence of HI in the interstellar medium is ubiquitous. HI is the principal actor in the majority of the physical processes at work in our Galaxy. Restricting ourselves to the topics of this symposium, atomic hydrogen is involved with the formation of molecular clouds and is one of the byproducts of their destruction by young stars. HI has different roles during a molecular cloud's life. I will discuss here a case of coexisting HI and H2 at large scale and the origin of HI in star forming regions. For completeness' sake, it should be mentionned that there are at least three other aspects of HI involvement: HI envelopes around molecular clouds, the impact of SNRs (see work on IC 443), and the role of HI in quiescent dark clouds (see van der Werf's work).

Electron Emission from Metals Excited with a CW CO2 Laser

1974 ◽  
Vol 52 (6) ◽  
pp. 475-481
Author(s):  
W. W. Duley
Keyword(s):  
Time Dependence ◽  
Electron Emission ◽  
Thermionic Emission ◽  
Exoelectron Emission ◽  
Electron Current ◽  
Surface Sites ◽  
Complex Dependence ◽  
Cw Co2 Laser ◽  
Ion Emission

The time dependence of electron and ion emission from roughened metals on excitation with a CW CO2 laser has been studied. The emission currents are made up of pulses with durations of several ms. A complex dependence of both ion and electron current on time is observed on time scales ranging from ms to days. An interpretation of these effects based on thermionic emission from localized surface sites is given, and the possible role of exoelectron emission is discussed. Some possible applications of these effects are examined.

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