Low-temperature epitaxial growth of conductive LaNiO3 thin films by RF magnetron sputtering

2002 ◽  
Vol 410 (1-2) ◽  
pp. 114-120 ◽  
Author(s):  
Naoki Wakiya ◽  
Takaaki Azuma ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Rf Magnetron Sputtering

Epitaxial growth of Ba1−xKxBiO3 thin films by rf-magnetron sputtering

1991 ◽  
Vol 185-189 ◽  
pp. 1965-1966 ◽  
Author(s):  
Masahiro Iyori ◽  
Maruo Kamino ◽  
Kazuhiko Takahashi ◽  
Yorinobu Yoshisato ◽  
Shoichi Nakano
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Rf Magnetron Sputtering

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Preparation and magnetic properties for FeSex/Bi2Se3 bilayer films on silicon substrates by RF magnetron sputtering

2019 ◽  
Vol 12 (02) ◽  
pp. 1950018 ◽  
Author(s):  
J. Zhang ◽  
K. Zhao ◽  
X. S. Yang ◽  
Y. Zhao
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Weak Ferromagnetism ◽  
Film Plane ◽  
Silicon Substrates ◽  
Bilayer Films

FeSex/Bi2Se3 bilayer thin films were grown by RF magnetron sputtering on silicon substrates with different thicknesses of Bi2Se3 and the structural, morphological and magnetic properties were investigated. FeSex/Bi2Se3 bilayer films had Bi2Se3 crystallites oriented with c-axis perpendicular to the film plane, and exhibited weak ferromagnetism at low temperature due to the ferromagnetic FeSe2. The thickness of Bi2Se3 layer affected both crystalline structure of Fe–Se layer and the magnetic property.

Growth and Characterization of BaTiO3 Sputtered Thin Films at Low Temperature by RF Magnetron Sputtering

2013 ◽  
Vol 56 (10) ◽  
pp. 417-421
Author(s):  
Dai-ichiro YOSHIDA ◽  
Kentaro KINOSHITA ◽  
Hiroki MIURA ◽  
Satoru KISHIDA
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering

scholarly journals Epitaxial growth of “infinite layer” thin films and multilayers by rf magnetron sputtering

1998 ◽  
Vol 13 (8) ◽  
pp. 2195-2201 ◽  
Author(s):  
L. Fàbrega ◽  
E. Koller ◽  
J. M. Triscone ◽  
Ø. Fischer
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Alkaline Earth ◽  
Rf Magnetron Sputtering ◽  
Superconducting Properties ◽  
Infinite Layer ◽  
Semiconducting Behavior

We report on the preparation and characterization of epitaxial ACuO2 (A = Sr, Ca, Ba) thin films and multilayers with the so- called infinite layer (IL) structure, by rf magnetron sputtering. Films and multilayers without Ba have a remarkable crystal quality, whereas those containing this large ion are often multiphased and unstable. In spite of the excellent crystalline quality of these samples, obtaining thin films having both IL structure and displaying superconducting properties has not succeeded; our pure IL samples display semiconducting behavior, and the different procedures tried in order to dope them—annealings, introduction of disorder or cation vacancies, artificial layering—have failed. These results support that the pure IL structure ACuO2 (A = alkaline earth) cannot superconduct.

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