Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity

1997 ◽  
Vol 308-309 ◽  
pp. 550-554 ◽  
Author(s):  
Y.-L Wang ◽  
C Liu ◽  
S.-T Chang ◽  
M.-S Tsai ◽  
M.-S Feng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Low Dielectric

Investigations Of The Chemical-Mechanical Polishing Of Polymer Films For ILD Applications

1995 ◽  
Vol 381 ◽  
Author(s):  
Jan. M. Neirynck ◽  
S. P. Murarka ◽  
R. J. Gutmann
Keyword(s):  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Chemical Properties ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Acidic Ph ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Damascene Process ◽  
And Chemical Properties

AbstractLow dielectric constant films are being investigated as the interlayer dielectric (ILD) in a multilevel interconnection scheme for advanced ULSI circuits. In such applications they will be subjected to planarization processes using chemical-mechanical polishing (CMP), either directly during dielectric planarization or indirectly in the final stages of metal patterning using the Damascene process. In this paper we report the results of our initial investigations of the CMP of three different polymers, all with dielectric constant in the range of 2.3 – 2.7 and with different mechanical and chemical properties. The CMP was carried out using alumina as the abrasive in basic and acidic pH slurries. The effect of preannealing the polymer on the CMP behavior was also investigated

Chemical Mechanical Polishing Mechanisms of Low Dielectric Constant Polymers in Copper Slurries

1999 ◽  
Vol 146 (11) ◽  
pp. 4309-4315 ◽  
Author(s):  
Christopher L. Borst ◽  
Dipto G. Thakurta ◽  
William N. Gill ◽  
Ronald J. Gutmann
Keyword(s):  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Low Dielectric

Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films

1996 ◽  
Vol 427 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Charles C.F. Lin ◽  
Yuan-Tsu Hsieh ◽  
M.-S. Feng
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Characterization ◽  
Moisture Absorption ◽  
Removal Rate ◽  
Fluorine Content ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Fluorinated Oxides

AbstractNanohardness, modulus, and bonding structure of fluorinated silicon dioxides are characterized in order to evaluate their correlations with chemical-mechanical polishing (CM[P) performance. Alkaline-based slurry with adjusted pH is used for polishing in an attempt to delineate the chemical erosion from mechanical abrasion effects during CMIP of fluorinated oxides. The increase in CMIP removal rate and the reduction in refractive index with increasing fluorine content in the fluorinated oxides are related to the change in bonding configuration. The enhanced moisture absorption is due to the presence of fluorine in the oxide network.

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