Material Characterization and Chemical-Mechanical Polishing of Low-Dielectric Constant Fluorinated Silicon Dioxide Films

1996 ◽  
Vol 427 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Charles C.F. Lin ◽  
Yuan-Tsu Hsieh ◽  
M.-S. Feng
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Characterization ◽  
Moisture Absorption ◽  
Removal Rate ◽  
Fluorine Content ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Bonding Structure ◽  
Low Dielectric ◽  
Fluorinated Oxides

AbstractNanohardness, modulus, and bonding structure of fluorinated silicon dioxides are characterized in order to evaluate their correlations with chemical-mechanical polishing (CM[P) performance. Alkaline-based slurry with adjusted pH is used for polishing in an attempt to delineate the chemical erosion from mechanical abrasion effects during CMIP of fluorinated oxides. The increase in CMIP removal rate and the reduction in refractive index with increasing fluorine content in the fluorinated oxides are related to the change in bonding configuration. The enhanced moisture absorption is due to the presence of fluorine in the oxide network.

Characterization of PECVD Deposited Fluorosilicate Glass (FSG) After CMP and Cleaning

1996 ◽  
Vol 443 ◽  
Author(s):  
D. Mordo ◽  
I. Goswami ◽  
I. J. Malik ◽  
T. Mallon ◽  
R. Emami ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Thermal Desorption Spectroscopy ◽  
Low Dielectric Constant ◽  
Plasma Enhanced Cvd ◽  
Low Dielectric ◽  
Thermal Oxide ◽  
Stabilizing Effect ◽  
Intermetal Dielectric

AbstractA characterization of Plasma-Enhanced CVD Fluorinated Silicate Glass (FSG) is presented. This study investigates the behavior of FSG film in the Chemical Mechanical Polishing (CMP) environment and compares those characteristics to undoped TEOS (UTEOS), Thermal Oxide and Si-Rich oxide capped FSG films. The removal rate, refractive index (RI), surface roughness, contact angle, water content by FTIR and thermal desorption spectroscopy (TDS) were studied.The FSG films are polished ˜ 10% faster than the undoped PECVD oxide films. Their composition was slightly changed after CMP as can be seen by the minor increase in the RI. A layer of Si-Rich oxide (SRO) was found to have a stabilizing effect on the FSG film during CMP and post CMP cleaning operations, and thus can be used in the intermetal dielectric schemes that require low dielectric constant FSG layers.

Investigations Of The Chemical-Mechanical Polishing Of Polymer Films For ILD Applications

1995 ◽  
Vol 381 ◽  
Author(s):  
Jan. M. Neirynck ◽  
S. P. Murarka ◽  
R. J. Gutmann
Keyword(s):  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Chemical Properties ◽  
Mechanical Polishing ◽  
Low Dielectric Constant ◽  
Acidic Ph ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Damascene Process ◽  
And Chemical Properties

AbstractLow dielectric constant films are being investigated as the interlayer dielectric (ILD) in a multilevel interconnection scheme for advanced ULSI circuits. In such applications they will be subjected to planarization processes using chemical-mechanical polishing (CMP), either directly during dielectric planarization or indirectly in the final stages of metal patterning using the Damascene process. In this paper we report the results of our initial investigations of the CMP of three different polymers, all with dielectric constant in the range of 2.3 – 2.7 and with different mechanical and chemical properties. The CMP was carried out using alumina as the abrasive in basic and acidic pH slurries. The effect of preannealing the polymer on the CMP behavior was also investigated

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