The effects of ion irradiation on NiTi shape memory alloy thin films

1999 ◽  
Vol 342 (1-2) ◽  
pp. 67-73 ◽  
Author(s):  
Florent Goldberg ◽  
Émile J. Knystautas
2021 ◽  
Vol 736 ◽  
pp. 138906
Author(s):  
Zenglu Song ◽  
Xiao Tang ◽  
Xiang Chen ◽  
Tao Fu ◽  
Huanping Zheng ◽  
...  

1998 ◽  
Vol 330 (2) ◽  
pp. 196-201 ◽  
Author(s):  
H.D. Gu ◽  
K.M. Leung ◽  
C.Y. Chung ◽  
L. You ◽  
X.D. Han ◽  
...  

2003 ◽  
Vol 795 ◽  
Author(s):  
Xi Wang ◽  
Ann Lai ◽  
Joost J. Vlassak ◽  
Yves Bellouard

ABSTRACTWhen deposited at room temperature, sputtered NiTi thin films are amorphous and need to be crystallized before they can be used as a functional material. We present the results of an annealing study on substrate-constrained NiTi shape memory thin films. Amorphous films of a NiTi shape memory alloy were deposited by UHV sputtering. Films of thickness 1.0 μm were grown on (100) Si wafers both with and without an LPCVD SiNx barrier. The as-deposited films were annealed in vacuum at temperatures ranging from 500°C to 800°C. The microstructure of the annealed films was characterized using transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), and Rutherford back scattering (RBS).


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