Synthesis of boron-doped diamond films by DC plasma CVD using a CH4+CO2+H2 gas mixture at lower substrate temperature and formation of an n-Si/p-diamond heterojunction

AbstractA new bias-enhanced nucleation method based on an AC-bias step to form highly oriented diamond (HOD) nuclei on silicon substrates is presented. The uniformity of the nucleated film and the bias time strongly depended on the substrate temperature and the substrate holder. In our case the shortest bias time and highest nucleation densities were achieved at ∼ 850°C while using a graphite susceptor. Following this nucleation enhancement step the diamond films were grown out using conditions employing an α-parameter slightly greater than 2. This ultimately leads to extremely smooth and well-faceted (100) textured HOD films which could be used as substrates for the fabrication of electronic devices.Schottky diodes with high rectification ratios and high breakdown voltages have been fabricated for the first time via selective growth of the active boron doped diamond layers on these HOD films. Results of the growth procedure and diode performance will be given.

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Effects of discharge current and substrate temperature on the microstructure of diamond films deposited by DC plasma CVD

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90760-3 ◽

1991 ◽

Vol 115 (1-4) ◽

pp. 313-317 ◽

Cited By ~ 5

Author(s):

Setsuo Nakao ◽

Hirohumi Watatani ◽

Shigeo Maruno ◽

Mikio Noda

Keyword(s):

Substrate Temperature ◽

Discharge Current ◽

Diamond Films ◽

Plasma Cvd ◽

Dc Plasma

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Electrical properties of boron-doped diamond films prepared by dc plasma decomposition of CO2 + H2

Materials Letters ◽

10.1016/0167-577x(94)90130-9 ◽

1994 ◽

Vol 21 (1) ◽

pp. 95-99 ◽

Cited By ~ 6

Author(s):

P. Mitra ◽

K.K. Chattopadhyay ◽

S. Chaudhuri ◽

A.K. Pal

Keyword(s):

Electrical Properties ◽

Diamond Films ◽

Boron Doped Diamond ◽

Dc Plasma ◽

Boron Doped ◽

Plasma Decomposition

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Fourier Transform Infrared Spectroscopic Study of Boron-Doped Micro/Nano/Ultrananocrystalline Diamond Prepared by Chemical Vapor Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.802.140 ◽

2014 ◽

Vol 802 ◽

pp. 140-145 ◽

Cited By ~ 3

Author(s):

Tatiane M. Arantes ◽

Nazir M. Santos ◽

Adriana F. Azevedo ◽

Mauricio R. Baldan ◽

Neidenei G. Ferreira

Keyword(s):

Fourier Transform ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Diamond Films ◽

Chemical Vapor ◽

Fourier Transform Infrared ◽

Gas Mixture ◽

Infrared Spectroscopic Study ◽

Boron Doped Diamond ◽

Boron Doped

Boron-doped diamond (BDD) films were grown with different grain sizes. The films were deposited on silicon substrate after a suitable pre-treatment in a hot filament assisted by chemical vapor deposition (CVD) reactor in Ar/H2/CH4gas mixtures. The addition of argon to the growth gas mixture clearly revealed the transition from nanocrystalline (BDND) to ultrananocrystalline (BDUND) diamond films. Raman spectroscopy results of BDD, BDND and BDUND exhibited a good quality diamond films considering the diamond defined peak. Fourier Transform Infrared Spectroscopy (FTIR) spectra indicated carbonyl groups and B-C in BDND and BDUND films, while the microcrystalline BDD films showed only C-H bonds and boron-carbon (B-C), without the presence of oxygen and unsaturated species. Therefore, the carbonyl presence in the nanocrystalline films is mainly due to oxidation of transpolyacetylene present at the film grain boundaries. The transition became pronounced in the gas mixture with 60% of Ar, and the microcrystalline films were totally transformed in nanocrystalline diamond at 70% of Ar.

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