Ion Beam Synthesis of Buried CoxNi1−xSi2 Layers in Silicon

1993 ◽  
Vol 320 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1−xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Ion Beam Synthesis of Buried COXNi1-xSi2 Layers in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
M.F. Wu ◽  
J. De Wachter ◽  
A.-M. Van Bavel ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Ion Beam ◽  
Type A ◽  
Type B ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Unique Distribution ◽  
Buried Layers

ABSTRACTHeteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Microstructural characterization of ordered nickel silicide structures grown on (111) nickel silicide films

1996 ◽  
Vol 11 (4) ◽  
pp. 904-911 ◽  
Author(s):  
Herbert L. Ho ◽  
Charles L. Bauer ◽  
Subhash Mahajan ◽  
David E. Laughlin ◽  
Arthur G. Milnes
Keyword(s):  
Metastable Phase ◽  
Microstructural Characterization ◽  
Type A ◽  
Transformation Process ◽  
Nickel Silicide ◽  
Type B ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Xrd Techniques

The formation processes of epitaxial nickel silicides, resulting from the interaction of nickel silicide films (10 nm–100 nm) on (111) silicon (Si) substrates after furnace annealing, have been studied using transmission electron microscopy (TEM) and x-ray diffraction (XRD) techniques. The formation of type-A epitaxial grains (i.e., grown with the same orientation of the underlying Si substrate) and type-B epitaxial grains (i.e., rotated by 180± around the surface normal) in “thick” epitaxial films (i.e., greater than 35 nm) is proposed to be linked to the formation of a fluorite-based CuPt (L11)-like NiSi phase. This phase is found to be a metastable phase and is believed to be a transitional phase toward the formation of the equilibrium NiSi2 phase in both type-A and type-B orientations. In addition, we have found that a fluorite-based CuPt-like NiSi may even coexist with a fluorite-based CuAu I-like structure. The interrelationship between these two structures is discussed in the context of a displacive transformation process in fcc structures as originally proposed by Hansson and Barnes [Acta Metall. 12, 315 (1964)] and Pashley et al. [Philos. Mag. 19, 83 (1969)].

High quality GdSil.7 layers formed by high dose channeled implantation

1996 ◽  
Vol 427 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche ◽  
H. Bender
Keyword(s):  
Ion Beam ◽  
Hexagonal Phase ◽  
Hexagonal Structure ◽  
High Dose ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Better Than

AbstractThin gadolinium silicide layers have been formed by channeled ion beam synthesis. Continuous and heteroepitaxial GdSil.7 layers with a hexagonal structure and a χmin value of 10% are prepared by Gd ion implantation at 90 keV to a dose of 1.3x1017/cm2 at 450°C in Si(111) using channeled implantation. The hexagonal phase of GdSi1.7 is stable up to a temperature of 850°C. Both the crystalline quality and the phase stability are much better than the results obtained by conventional techniques. Annealing at > 900°C suddenly changes the χmin value of the silicide layer from 10% to 100%. X-ray diffraction shows that the phase has changed to orthorhombic. RBS/channeling, x-ray diffraction and transmission electron microscopy are used in this study.

Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker
Keyword(s):  
Electron Diffraction ◽  
Depth Distribution ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis ◽  
Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Microstructural Features of EB-PVD Thermal Barrier Coatings Irradiated by High-Intensity Pulsed Ion Beam

2008 ◽  
Vol 373-374 ◽  
pp. 300-303 ◽  
Author(s):  
C. Liu ◽  
X.G. Han ◽  
X.P. Zhu ◽  
M.K. Lei
Keyword(s):  
Electron Microscope ◽  
Thermal Barrier Coatings ◽  
High Intensity ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Thermal Barrier ◽  
X Ray Diffraction ◽  
Barrier Coatings ◽  
Transmission Electron ◽  
Single Column

Thermal barrier coatings (TBCs) fabricated by electron-beam physical-vapor deposition (EB-PVD) were irradiated by high-intensity pulsed ion beam (HIPIB) at an ion current density of 100 A/cm2 with a shot number of 1-10. Microstructural features of the irradiated EB-PVD TBCs were characterized by using X-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. All the HIPIB-irradiated EB-PVD TBC surfaces present smooth and densified features. The originated intercolumnar channels growing out to the top-coat surface and nanometer-scale gaps inside each single column were sealed after the remelting of TBC surface induced by HIPIB, resulting in formation of a continuous remelted layer about 1-2 μm in thickness. The dense remelted layer can work as a barrier against the heat-flow and corrosive gases, and gives the possibility of improving thermal conductivity and oxidation resistance of the HIPIB irradiated EB-PVD TBC.

scholarly journals Microstructure Evolution in ZrCx with Different Stoichiometries Irradiated by Four MeV Au Ions

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3768
Author(s):  
Boxin Wei ◽  
Dong Wang ◽  
Yujin Wang ◽  
Haibin Zhang
Keyword(s):  
Radiation Damage ◽  
Microstructure Evolution ◽  
Vacancy Concentration ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Dislocation Loops ◽  
Black Dot ◽  
X Ray Diffraction ◽  
Near Surface ◽  
Transmission Electron

ZrCx ceramics with different stoichiometries were irradiated under a four MeV Au ion beam in doses of 2 × 1016 ions/cm2 at room temperature, corresponding to ~130 dpa. Grazing incidence, X-ray diffraction and transmission electron microscopy were performed to study the radiation damage and microstructure evolution in ZrCx ceramics. With the decrease in C/Zr ratio, the expansion of ZrCx lattice became smaller after irradiation. Some long dislocation lines formed at the near-surface, while, in the area with the greatest damage (depth of ~400 nm), large amounts of dislocation loops formed in ZrC, ZrC0.9 and ZrC0.8. With the increase in carbon vacancy concentration, the size of the dislocation loops gradually decreased. Few dislocation loops were found in ZrC0.7 after irradiation, and only black-dot defects were found in the area with the greatest damage. For the non-stoichiometric ZrCx, with the increase of the intrinsic vacancies, the number of C interstitials caused by irradiation decreased, and the recombination barrier of C Frenkel pairs reduced. The above factors will reduce the total number of C interstitials after cascade cooling, suppressing the formation and growth of dislocation loops, which is significant for the enhancement of the tolerance of radiation damage.

Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix

1993 ◽  
Vol 316 ◽  
Author(s):  
H.A. Atwater ◽  
K.V. Shcheglov ◽  
S.S. Wong ◽  
K.J. Vahala ◽  
R.C. Flagan ◽  
...  
Keyword(s):  
Ion Beam ◽  
Optoelectronic Device ◽  
Structural Defects ◽  
Si Substrates ◽  
Localized State ◽  
Transmission Electron ◽  
Ion Beam Synthesis ◽  
Theoretical Predictions ◽  
Device Applications ◽  
Ge Nanocrystals

ABSTRACTIon beam synthesis of Si and Ge nanocrystals in an SiO2 matrix is performed by precipitation from supersaturated solid solutions created by ion implantation. Films of SiO2 on (100) Si substrates are implanted with Si and Ge at doses 1 × 1016/cm2 - 5 × 1016/cm2. Implanted samples are subsequently annealed to induce precipitation of Si and Ge nanocrystals. Raman spectroscopy and high-resolution transmission electron microscopy indicate a correlation between visible room-temperature photoluminescence and the formation of diamond cubic nanocrystals approximately 2–5 nm in diameter in annealed samples. As-implanted but unannealed samples do not exhibit luminescence. Rutherford backscattering spectra indicate a steepening of implanted Ge profiles upon annealing. Photoluminescence spectra are correlated with annealing temperatures, and compared with theoretical predictions for various possible luminescence mechanisms, such as radiative recombination of quantum-confined excitons, as well as possible localized state luminescence related to structural defects in SiO2. Potential optoelectronic device applications are also discussed.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
J. O. Olowolafe ◽  
R. Fastow
Keyword(s):  
Amorphous Silicon ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Reaction Rates ◽  
Rutherford Backscattering ◽  
Thin Layers ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Crystal Silicon ◽  
Transmission Electron

ABSTRACTThin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

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