Fabrication of buried layers of β-SiC using ion beam synthesis

ABSTRACTHeteroepitaxial CoxNi1−xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary silicide layer contains 11% type B and 89% type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

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Buried layers of silicon oxy-nitride fabricated using ion beam synthesis

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(88)90250-9 ◽

1988 ◽

Vol 32 (1-4) ◽

pp. 427-432 ◽

Cited By ~ 28

Author(s):

K.J. Reeson ◽

P.L.F. Hemment ◽

C.D. Meekison ◽

C.D. Marsh ◽

G.R. Booker ◽

...

Keyword(s):

Ion Beam ◽

Ion Beam Synthesis ◽

Buried Layers

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Ion beam synthesis of thin buried layers of SiO2 in silicon

Vacuum ◽

10.1016/0042-207x(86)90131-4 ◽

1986 ◽

Vol 36 (11-12) ◽

pp. 877-881 ◽

Cited By ~ 58

Author(s):

PLF Hemment ◽

KJ Reeson ◽

JA Kilner ◽

RJ Chater ◽

C Marsh ◽

...

Keyword(s):

Ion Beam ◽

Ion Beam Synthesis ◽

Buried Layers

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keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

MRS Proceedings ◽

10.1557/proc-354-171 ◽

1994 ◽

Vol 354 ◽

Cited By ~ 18

Author(s):

J.K.N. Lindner ◽

A. Frohnwieser ◽

B. Rauschenbach ◽

B. Stritzker

Keyword(s):

Ion Implantation ◽

Annealing Time ◽

Annealing Temperature ◽

Ion Beam ◽

High Dose ◽

Layer Formation ◽

Substrate Orientation ◽

Ion Beam Synthesis ◽

Buried Layers ◽

Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

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Experimental study and modeling of structure formation in buried layers at ion beam synthesis

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(94)95195-0 ◽

1994 ◽

Vol 89 (1-4) ◽

pp. 337-341 ◽

Cited By ~ 10

Author(s):

S. Reiss ◽

R. Weber ◽

K.-H. Heinig ◽

W. Skorupa

Keyword(s):

Experimental Study ◽

Structure Formation ◽

Ion Beam ◽

Ion Beam Synthesis ◽

Buried Layers

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Influence of oxygen on the ion-beam synthesis of silicon carbide buried layers in silicon

Semiconductors ◽

10.1134/1.1187611 ◽

1998 ◽

Vol 32 (12) ◽

pp. 1261-1265

Author(s):

V. V. Artamanov ◽

M. Ya. Valakh ◽

N. I. Klyui ◽

V. P. Mel’nik ◽

A. B. Romanyuk ◽

...

Keyword(s):

Silicon Carbide ◽

Ion Beam ◽

Ion Beam Synthesis ◽

Buried Layers

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Ion Beam Synthesis of Buried COXNi1-xSi2 Layers in Silicon

MRS Proceedings ◽

10.1557/proc-316-711 ◽

1993 ◽

Vol 316 ◽

Author(s):

M.F. Wu ◽

J. De Wachter ◽

A.-M. Van Bavel ◽

H. Pattyn ◽

G. Langouche ◽

...

Keyword(s):

Ion Beam ◽

Type A ◽

Type B ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Good Crystalline Quality ◽

Ion Beam Synthesis ◽

Unique Distribution ◽

Buried Layers

ABSTRACTHeteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.

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Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers

MRS Proceedings ◽

10.1557/proc-402-499 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 7

Author(s):

H. Bender ◽

M. F. Wu ◽

A. Vantomme ◽

H. Pattyn ◽

G. Langouche

Keyword(s):

Epitaxial Growth ◽

Structural Characterization ◽

Ion Beam ◽

Surface Layers ◽

High Quality ◽

Vacancy Ordering ◽

Ion Beam Synthesis ◽

Buried Layers

AbstractThe results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.

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