Radiation damage in He implanted silicon at high temperature using multi-energies

Author(s):  
M.L David ◽  
A Ratchenkova ◽  
E Oliviero ◽  
M.F Denanot ◽  
M.F Beaufort ◽  
...  
Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1350
Author(s):  
Dmitriy I. Shlimas ◽  
Artem L. Kozlovskiy ◽  
Askar Kh. Syzdykov ◽  
Daryn B. Borgekov ◽  
Maxim V. Zdorovets

The aim of this work was to study resistance to helium accumulation processes in the structure of the surface layer of lithium-containing ceramics and the subsequent destruction and embrittlement processes, depending on radiation fluence. The objects of study were Li2TiO3-type ceramics obtained by thermal sintering. The fluence dependency of changes in the structural and strength properties of ceramics was determined to be in the range from 1018 to 1022 ion/m2, which corresponded to the concentration of implanted helium from 0.01% to 0.8–1 at.%. Irradiation was carried out at a temperature of 700 °C, which made it possible to simulate the processes of radiation damage that were closest to the real conditions in the reactor core. During the studies carried out, it was found that, at irradiation fluences of 1018–1020 ion/m2, the formation of point radiation defects was equaled by the process of thermal annealing of defects, as a result of which the concentration of defects and their effect on the change in the structural and strength properties of ceramics were insignificant. An increase in the concentration of implanted helium in the structure of the surface layer to above 0.5 at.% led to the dominance of radiation damage processes over the annealing of defects and the formation of gas-filled cavities, which negatively affects the strength of ceramics.


1983 ◽  
Vol 27 ◽  
Author(s):  
G. Braunstein ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan

ABSTRACTIn previous studies it was found that when highly oriented pyrolytic graphite (HOPG) is implanted at room temperature, the damage caused by the implantation could be completely annealed by heating the sample to temperatures higher than ∼ 2500°C. However at these high temperatures, the implanted species was found to diffuse out of the sample, as evidenced by the disappearance of the impurity peak in the Rutherford backscattering (RBS) spectrum. If, on the other hand, the HOPG crystal was held at a high temperature (≥ 600°C) during the implantation, partial annealing could be observed. The present work further shows that it is possible to anneal the radiation damage and simultaneously to retain the implants in the graphite lattice by means of high temperature implantation (Ti ≥ 450°C) followed by annealing at 2300°C.


1971 ◽  
Vol 30 (5) ◽  
pp. 538-542 ◽  
Author(s):  
Z. I. Chechetkina ◽  
V. P. Gol'tsev ◽  
V. A. Kazakov ◽  
G. A. Sernyaev ◽  
V. G. Bazyukin

Author(s):  
E.A. Kenik ◽  
D.F. Pedraza ◽  
S.P. Withrow

Several grades of graphite are used in nuclear applications; as moderators in fission reactors, primary fuel containment in high temperature gas-cooled reactors, and plasma facing materials in fusion reactors. Whereas high temperature (<800°C) radiation damage response is reasonably well understood, the low temperature response is less well understood, including amorphization under irradiation. This study examined this response for ion-irradiated, highly-oriented pyrolytic graphite (HOPG). Electron transparent flakes of HOPG were prepared by repeated cleavage. Folding grids were used to hold the flakes during ion irradiation and electron microscopy. Specimens were irradiated with either 35 or 165 keV carbon or 300 keV xenon ions to fluences up to 1 × 1016 and 3×1015 ions/cm2, respectively, at nominal temperatures from room temperature to 600°C. The low energy carbon and xenon ions were selected to give similar ion ranges (∼84 nm). The range of the 165 keV carbon ions was 330 nm.


2003 ◽  
Vol 66 (1-4) ◽  
pp. 536-541 ◽  
Author(s):  
H Ohyama ◽  
K Takakura ◽  
K Shigaki ◽  
S Kuboyama ◽  
S Matsuda ◽  
...  

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