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Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO2/Si structures
Applied Surface Science
◽
10.1016/s0169-4332(00)00058-1
◽
2000
◽
Vol 159-160
◽
pp. 492-497
Author(s):
K Prabhakaran
◽
K Sumitomo
◽
T Ogino
Keyword(s):
Quantum Dots
◽
Interface Engineering
◽
Ge Quantum Dots
◽
Metal Incorporation
Download Full-text
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References
Interface-engineering enhanced light emission from Si/Ge quantum dots
New Journal of Physics
◽
10.1088/1367-2630/abafe7
◽
2020
◽
Vol 22
(9)
◽
pp. 093037
Author(s):
Zhi-Min Ji
◽
Jun-Wei Luo
◽
Shu-Shen Li
Keyword(s):
Quantum Dots
◽
Light Emission
◽
Interface Engineering
◽
Ge Quantum Dots
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MICROSTRUCTURE OF MULTILAYER HETEROSYSTEMS CONTAINING MOLECULES OF Ge QUANTUM DOTS IN Si ON THE STAGES OF NUCLEATION AND GROWTH BY EXAFS SPECTROSCOPY
Журнал структурной химии
◽
10.15372/jsc20160715
◽
2016
◽
Keyword(s):
Quantum Dots
◽
Nucleation And Growth
◽
Exafs Spectroscopy
◽
Ge Quantum Dots
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Raman Scattering in Superlattices with Ge Quantum Dots
Ukrainian Journal of Physics
◽
10.15407/ujpe60.12.1224
◽
2015
◽
Vol 60
(12)
◽
pp. 1224-1233
Author(s):
Yu.A. Romanyuk
◽
◽
A.M. Yaremko
◽
V.M. Dzhagan
◽
V.O. Yukhymchuk
◽
...
Keyword(s):
Quantum Dots
◽
Raman Scattering
◽
Ge Quantum Dots
Download Full-text
Interface Engineering Based on Multinanoscale Heterojunctions between NiO Quantum Dots, N-Doped Amorphous Carbon and Ni for Advanced Supercapacitor
ACS Applied Energy Materials
◽
10.1021/acsaem.0c02993
◽
2021
◽
Author(s):
Boli Tong
◽
Wutao Wei
◽
Zijie Wu
◽
Liangcai Zhao
◽
Wanyu Ye
◽
...
Keyword(s):
Quantum Dots
◽
Amorphous Carbon
◽
Interface Engineering
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Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments
Applied Surface Science
◽
10.1016/j.apsusc.2003.08.098
◽
2004
◽
Vol 224
(1-4)
◽
pp. 152-155
◽
Cited By ~ 6
Author(s):
S.W Lee
◽
L.J Chen
◽
P.S Chen
◽
M.-J Tsai
◽
C.W Liu
◽
...
Keyword(s):
Quantum Dots
◽
Ge Quantum Dots
Download Full-text
Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates
Nanotechnology
◽
10.1088/0957-4484/22/29/295304
◽
2011
◽
Vol 22
(29)
◽
pp. 295304
◽
Cited By ~ 13
Author(s):
A Pérez del Pino
◽
E György
◽
I C Marcus
◽
J Roqueta
◽
M I Alonso
Keyword(s):
Quantum Dots
◽
Laser Radiation
◽
Pulsed Laser
◽
Pulsed Laser Radiation
◽
Si Substrates
◽
Ge Quantum Dots
◽
Self Assembled
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Design of direct band gap type I GeSn/Ge quantum dots for mid-IR light emitters on Si substrate
physica status solidi (RRL) - Rapid Research Letters
◽
10.1002/pssr.201700047
◽
2017
◽
Vol 11
(5)
◽
pp. 1700047
◽
Cited By ~ 6
Author(s):
Bouraoui Ilahi
Keyword(s):
Quantum Dots
◽
Band Gap
◽
Type I
◽
Si Substrate
◽
Light Emitters
◽
Direct Band Gap
◽
Direct Band
◽
Ge Quantum Dots
◽
Ir Light
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Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer
Applied Physics Letters
◽
10.1063/1.2720756
◽
2007
◽
Vol 90
(15)
◽
pp. 153104
◽
Cited By ~ 38
Author(s):
Yoshiaki Nakamura
◽
Masakazu Ichikawa
◽
Kentaro Watanabe
◽
Yasuhiro Hatsugai
Keyword(s):
Quantum Dots
◽
Electron Transfer
◽
Quantum Fluctuation
◽
Tunneling Current
◽
Single Electron
◽
Single Electron Transfer
◽
Ge Quantum Dots
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Electrical manipulation of an electronic two-state system in Ge quantum dots
Applied Physics Letters
◽
10.1063/1.3266864
◽
2009
◽
Vol 95
(23)
◽
pp. 232103
◽
Cited By ~ 8
Author(s):
C. E. Pryor
◽
M. E. Flatté
◽
J. Levy
Keyword(s):
Quantum Dots
◽
State System
◽
Ge Quantum Dots
◽
Electrical Manipulation
Download Full-text
Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si
Journal of Applied Physics
◽
10.1063/1.4986986
◽
2017
◽
Vol 122
(13)
◽
pp. 133101
◽
Cited By ~ 14
Author(s):
A. I. Yakimov
◽
V. V. Kirienko
◽
A. A. Bloshkin
◽
V. A. Armbrister
◽
A. V. Dvurechenskii
Keyword(s):
Quantum Dots
◽
Infrared Photodetectors
◽
Mid Infrared
◽
Plasmon Polariton
◽
Ge Quantum Dots
Download Full-text
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