Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

1997 ◽  
Vol 117-118 ◽  
pp. 700-704 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Tetsuya Okada ◽  
Fumito Hiwatashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation

Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
J.E. Cunningham ◽  
T.H. Chin ◽  
B. Tell ◽  
W. Jan ◽  
J. A. Ditzenberger ◽  
...  
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Atomic Diffusion ◽  
Si Doping ◽  
Gas Source ◽  
Capacitance Voltage

AbstractWe report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10−cm2/sec with an activation energy of 1.8 eV.

Anisotropic surface segregation of indium atoms in molecular beam epitaxy of InGaAs/GaAs quantum wells

2001 ◽  
Vol 89 (1) ◽  
pp. 217-220 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Yoshikatsu Yasuda ◽  
András Kovács ◽  
Peter B. Barna
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Anisotropic Surface

In surface segregation during growth of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy

2002 ◽  
Vol 66 (16) ◽  
Author(s):  
Patrick Waltereit ◽  
Oliver Brandt ◽  
Klaus H. Ploog ◽  
Maria Antonia Tagliente ◽  
Leander Tapfer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

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