Modifications of polyether-etherketone surface after 193 nm and 248 nm excimer laser radiation

1999 ◽  
Vol 138-139 ◽  
pp. 93-96 ◽  
Author(s):  
P Laurens ◽  
B Sadras ◽  
F Decobert ◽  
F Arefi ◽  
J Amouroux
Keyword(s):  
Laser Radiation ◽  
Excimer Laser ◽  
Excimer Laser Radiation ◽  
193 Nm

Changes in optical interference coatings exposed to 193-nm excimer laser radiation

1999 ◽  
Author(s):  
Joerg Heber ◽  
Roland Thielsch ◽  
Holger Blaschke ◽  
Norbert Kaiser ◽  
Uwe Leinhos ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Excimer Laser ◽  
Optical Interference ◽  
Excimer Laser Radiation ◽  
193 Nm

Ablation of poly(methyl methacrylate) and poly(2-hydroxyethyl methacrylate) by 308, 222 and 193 nm excimer-laser radiation

1995 ◽  
Vol 60 (3) ◽  
pp. 261-270 ◽  
Author(s):  
A. Costela ◽  
J. M. Figuera ◽  
F. Florido ◽  
I. Garc�a-Moreno ◽  
E. P. Collar ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Methyl Methacrylate ◽  
Excimer Laser ◽  
Hydroxyethyl Methacrylate ◽  
Poly Methyl Methacrylate ◽  
Excimer Laser Radiation ◽  
193 Nm

scholarly journals Ablated gratings on borosilicate glass by 193-nm excimer laser radiation

1999 ◽  
Vol 69 (7) ◽  
pp. S739-S741 ◽  
Author(s):  
S. Pissadakis ◽  
L. Reekie ◽  
M. Hempstead ◽  
M.N. Zervas ◽  
J.S. Wilkinson
Keyword(s):  
Laser Radiation ◽  
Excimer Laser ◽  
Borosilicate Glass ◽  
Excimer Laser Radiation ◽  
193 Nm

Photorefractivity of Indium Oxide (InO/sub x/) Using 193 nm Excimer Laser Radiation

2005 ◽  
Author(s):  
S. Pissadakis ◽  
S. Mailis ◽  
L. Reekie ◽  
R.W. Eason ◽  
N.A. Vainos ◽  
...  
Keyword(s):  
Laser Radiation ◽  
Excimer Laser ◽  
Indium Oxide ◽  
Excimer Laser Radiation ◽  
193 Nm

The interaction of 193 nm excimer laser radiation with single-crystal zinc oxide: Neutral atomic zinc and oxygen emission

2013 ◽  
Vol 114 (5) ◽  
pp. 053511 ◽  
Author(s):  
Enamul H. Khan ◽  
S. C. Langford ◽  
J. T. Dickinson ◽  
L. A. Boatner
Keyword(s):  
Zinc Oxide ◽  
Laser Radiation ◽  
Single Crystal ◽  
Excimer Laser ◽  
Excimer Laser Radiation ◽  
193 Nm

UV Laser-Induced Metal Deposition on Semiconductors From Electroplating Solutions

1986 ◽  
Vol 75 ◽  
Author(s):  
Joseph Zahavi ◽  
Pehr E. Pehrsson
Keyword(s):  
Laser Radiation ◽  
Schottky Barrier ◽  
Excimer Laser ◽  
Pulse Energy ◽  
Metal Deposition ◽  
Uv Laser ◽  
Sample Characterization ◽  
Excimer Laser Radiation ◽  
193 Nm

AbstractWe have demonstrated metal deposition on semiconductors immersed in electroplating solution by exposure to UV laser radiation. N-type β-SiC and Si in gold or Pd/Ni electroplating solutions were exposed to 20 ns pulses of 193 nm or 248 nm excimer laser radiation. The energy per pulse was 20–100 mJ. Au and Pd/Ni metallizations deposited in lines and circles on SiC showed leaky Schottky barrier I-V characteristics. The thickness increased with increasing pulse energy or number. Both masked and maskless deposition were demonstrated without apparent damage to the substrate. Details of the process, potential mechanisms, and sample characterization are discussed.

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