Room-temperature 1.54 μm electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering

2001 ◽  
Vol 90 (11) ◽  
pp. 5835-5837 ◽  
Author(s):  
G. Z. Ran ◽  
Y. Chen ◽  
W. C. Qin ◽  
J. S. Fu ◽  
Z. C. Ma ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Si Substrates ◽  
Doped Silicon ◽  
Er Doped

scholarly journals ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING

2001 ◽  
Vol 50 (12) ◽  
pp. 2487
Author(s):  
YUAN FANG-CHENG ◽  
RAN GUANG-ZHAO ◽  
CHAN YUAN ◽  
ZHANG BO-RUI ◽  
QIAO YONG-PING ◽  
...  
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Silicon Oxide Film ◽  
Doped Silicon ◽  
Er Doped

Long Luminescence Lifetime of 1.54 μ m Er3+ Luminescence from Erbium Doped Silicon Rich Silicon Oxide and its Origin

1998 ◽  
Vol 536 ◽  
Author(s):  
Se-Young Seo ◽  
Jung H. Shin ◽  
Choochon Lee
Keyword(s):  
Room Temperature ◽  
Radiative Decay ◽  
Silicon Oxide ◽  
Silicon Nanoclusters ◽  
Excitation Rate ◽  
Carrier Recombination ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Almost All ◽  
Er Doped

AbstractThe photoluminescent properties of erbium doped silicon rich silicon oxide (SRSO) is investigated. The silicon content of SRSO was varied from 43 to 33 at. % and Er concentration was 0.4–0.7 at. % in all cases. We observe strong 1.54 μ m luminescence due to 4I13/2⇒4I15/2 Er3+ 4f transition, excited via energy transfer from carrier recombination in silicon nanoclusters to Er 4f shells. The luminescent lifetimes at the room temperature are found to be 4–7 msec, which is longer than that reported from Er in any semiconducting host material, and comparable to that of Er doped SiO2 and A12O3. The dependence of the Er3+ luminescent intensities and lifetimes on temperature, pump power and on background illumination shows that by using SRSO, almost all non-radiative decay paths of excited Er3+ can be effectively suppressed, and that such suppression is more important than increasing excitation rate of Er3+. A planar waveguide using Er doped SRSO is also demonstrated.

Er3+Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Films Deposited by Laser Ablation of a Si:Er Target in an Oxygen Atmosphere

2004 ◽  
Vol 43 (4A) ◽  
pp. 1541-1544 ◽  
Author(s):  
Jeong Sook Ha ◽  
Young Rae Jang ◽  
Keon Ho Yoo ◽  
Chang Hyun Bae ◽  
Sang Hwan Nam ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Atmosphere ◽  
Doped Silicon ◽  
Er Doped

Correlation of efficient luminescence with crystal structures of y-Er2Si2O7 and α-Er2Si2O7 in Er-doped silicon oxide films

2019 ◽  
Vol 54 (19) ◽  
pp. 12668-12675 ◽  
Author(s):  
Yuhan Gao ◽  
Qianyu Fu ◽  
Hao Shen ◽  
Dongsheng Li ◽  
Deren Yang
Keyword(s):  
Crystal Structures ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Doped Silicon ◽  
Er Doped

Thermally Stable Carbon-Doped Silicon Oxide Films Deposited at Room Temperature

2006 ◽  
Author(s):  
Keisuke Yamaoka ◽  
Hideaki Kato ◽  
Daisuke Tsukiyama ◽  
Yuji Yoshizako ◽  
Yoshikazu Terai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Stable ◽  
Stable Carbon ◽  
Carbon Doped ◽  
Doped Silicon

Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide

1997 ◽  
Vol 70 (14) ◽  
pp. 1790-1792 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
K. D. Hirschman ◽  
P. M. Fauchet ◽  
K. L. Moore ◽  
...  
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Room Temperature Photoluminescence ◽  
Doped Silicon ◽  
Er Doped
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