scholarly journals Optimisation of masked ion irradiation damage profiles in YBCO thin films by Monte Carlo simulation

2002 ◽  
Vol 372-376 ◽  
pp. 55-58
Author(s):  
Nianhua Peng ◽  
Chris Jeynes ◽  
Roger Webb ◽  
Ivan Chakarov ◽  
Mark Blamire
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Ion Irradiation ◽  
Irradiation Damage ◽  
Ybco Thin Films

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Transition from island to layer growth of thin films: A Monte Carlo simulation

1977 ◽  
Vol 40 (1) ◽  
pp. 47-58 ◽  
Author(s):  
D. Kashchiev ◽  
J.P. van der Eerden ◽  
C. van Leeuwen
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Layer Growth

Monte Carlo Simulation of Sculptured Thin Films Growth of SiO 2 on Si for Applications

2008 ◽  
Vol 25 (12) ◽  
pp. 4456-4458 ◽  
Author(s):  
Jiang Shao-Ji ◽  
Yu Meng-Ying ◽  
Wei Yu-Wei ◽  
Tang Ji-Jia
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Sculptured Thin Films

Ion irradiation damage in nanocrystalline FeCo thin films

1990 ◽  
Vol 114 (1-2) ◽  
pp. 145-155 ◽  
Author(s):  
J. P. Riviere ◽  
P. Bouillaud ◽  
J. F. Dinhut ◽  
J. Delafond
Keyword(s):  
Thin Films ◽  
Ion Irradiation ◽  
Irradiation Damage

Monte Carlo simulation of argon atoms transport during deposition of W thin films by RF-dc coupled magnetron sputtering

Vacuum ◽  
1997 ◽  
Vol 48 (7-9) ◽  
pp. 669-670 ◽  
Author(s):  
PK Petrov ◽  
VA Volpyas ◽  
EK Hollmann ◽  
T Tanaka ◽  
K Kawabata
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Magnetron Sputtering
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