In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

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In-situ control of molecular beam epitaxial growth by spectral reflectivity analysis

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2020.125993 ◽

2021 ◽

Vol 557 ◽

pp. 125993

Author(s):

Klaus Biermann ◽

Paul L.J. Helgers ◽

Antonio Crespo-Poveda ◽

Alexander S. Kuznetsov ◽

Abbes Tahraoui ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Spectral Reflectivity ◽

Molecular Beam Epitaxial ◽

In Situ Control ◽

Molecular Beam Epitaxial Growth

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In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

Scientific Reports ◽

10.1038/srep14760 ◽

2015 ◽

Vol 5 (1) ◽

Cited By ~ 56

Author(s):

Zheng Zuo ◽

Zhongguang Xu ◽

Renjing Zheng ◽

Alireza Khanaki ◽

Jian-Guo Zheng ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Van Der Waals ◽

Van Der Waals Heterostructures

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In-situ control of temperature and alloy composition of Cd1−xZnxTe grown by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-000-0218-x ◽

2000 ◽

Vol 29 (6) ◽

pp. 742-747 ◽

Cited By ~ 5

Author(s):

M. Daraselia ◽

G. Brill ◽

J. W. Garland ◽

V. Nathan ◽

S. Sivananthan

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Alloy Composition ◽

In Situ Control

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Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy

Физика и техника полупроводников ◽

10.21883/ftp.2018.05.45868.57 ◽

2018 ◽

Vol 52 (5) ◽

pp. 524

Author(s):

Sergei Timoshnev ◽

Andrey Mizerov ◽

Maxim Sobolev ◽

Ekaterina Nikitina

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Lateral Size ◽

In Situ Control ◽

Kinetics Of

AbstractThe studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.

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In situ control of gan growth by molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-997-0163-z ◽

1997 ◽

Vol 26 (3) ◽

pp. 272-280 ◽

Cited By ~ 64

Author(s):

R. Held ◽

D. E. Crawford ◽

A. M. Johnston ◽

A. M. Dabiran ◽

P. I. Cohen

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

In Situ Control

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Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds

MRS Proceedings ◽

10.1557/proc-169-711 ◽

1989 ◽

Vol 169 ◽

Cited By ~ 1

Author(s):

D.G. Schlomtt ◽

J.N. Eckstein ◽

I. Bozo Vic ◽

A.F. Marshall ◽

J.T. Sizemore ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Cuprate Superconductors ◽

Molecular Beams ◽

Atomic Scale ◽

Superconducting Film ◽

Mbe Growth

AbstractThe in situ epitaxial growth of Bi‐Sr‐Ca‐Cu‐O films by molecular beam epitaxy (MBE) is reported. The suitability of ozone to the MBE growth of cuprate superconductors is discussed. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Can‐1CunOx phases, including 2201, 2212,2223,2245, and layered mixtures of these phases. Using these techniques a superconducting film with TConset near 100 K and Tc (ρ=0) of 81 K was achieved under entirely MBE conditions (Pchamber≤xl0‐4 Torr during growth and cooling). The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE growth to selectively grow Bi2Sr2Can‐1CunOx phases.

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An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010648x ◽

1988 ◽

Vol 46 ◽

pp. 884-885

Author(s):

D. Loretto ◽

J. M. Gibson ◽

S. M. Yalisove ◽

R. T. Tung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Defect Density ◽

High Vacuum ◽

Ultra High Vacuum ◽

Ex Situ ◽

Metal Base ◽

In Situ Experiments ◽

Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

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