scholarly journals Growth of GaN layers on Si(111) substrates by plasma-assisted molecular beam epitaxy

2018 ◽  
Vol 52 (5) ◽  
pp. 524
Author(s):  
Sergei Timoshnev ◽  
Andrey Mizerov ◽  
Maxim Sobolev ◽  
Ekaterina Nikitina
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Lateral Size ◽  
In Situ Control ◽  
Kinetics Of

AbstractThe studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

2010 ◽  
Vol 312 (2) ◽  
pp. 209-212 ◽  
Author(s):  
Daniel Billingsley ◽  
Walter Henderson ◽  
David Pritchett ◽  
W. Alan Doolittle
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Metal Organic ◽  
Kinetics Of

Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

2005 ◽  
Vol 357 (1-2) ◽  
pp. 165-169 ◽  
Author(s):  
Vladimir M. Kaganer ◽  
Wolfgang Braun ◽  
Bernd Jenichen ◽  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Kinetics Of

Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy

1999 ◽  
Vol 86 (8) ◽  
pp. 4322-4325 ◽  
Author(s):  
C. Adelmann ◽  
R. Langer ◽  
E. Martinez-Guerrero ◽  
H. Mariette ◽  
G. Feuillet ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of

Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 323 (1) ◽  
pp. 68-71 ◽  
Author(s):  
A.M. Mizerov ◽  
V.N. Jmerik ◽  
M.A. Yagovkina ◽  
S.I. Troshkov ◽  
P.S. Kop'ev ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of
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