Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

2003 ◽  
Vol 101 (1-3) ◽  
pp. 124-127 ◽  
Author(s):  
B.E. Umirzakov ◽  
D.A. Tashmukhamedova ◽  
E.U. Boltaev ◽  
A.A. Dzhurakhalov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Metal Silicides

Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films

2021 ◽  
Vol 39 (4) ◽  
pp. 043413
Author(s):  
Rakesh Kumar Pandey ◽  
Puspashree Mishra ◽  
Akhilesh Pandey ◽  
Shankar Dutta ◽  
Aman Arora ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam ◽  
Epitaxial Films

Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 917-920 ◽  
Author(s):  
T S Cheng ◽  
C T Foxon ◽  
G B Ren ◽  
J W Orton ◽  
Yu V Melnik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Substrate Type

scholarly journals Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

2020 ◽  
Vol 59 (SF) ◽  
pp. SFFA01
Author(s):  
Sho Aonuki ◽  
Yudai Yamashita ◽  
Kaoru Toko ◽  
Takashi Suemasu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 5 (3) ◽  
pp. 035201 ◽  
Author(s):  
Giuliana Impellizzeri ◽  
Lucia Romano ◽  
Lorenzo Bosco ◽  
Corrado Spinella ◽  
Maria Grazia Grimaldi
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Growth and characterization of In2Se3 epitaxial films by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 1045-1050 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films

Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy

2008 ◽  
Vol 51 (10) ◽  
pp. 1001-1015 ◽  
Author(s):  
A. V. Voitsekhovskii ◽  
D. V. Grigor’ev ◽  
N. Kh. Talipov
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Molecular Beam

Negative Anisotropic Magnetoresistance in $\gamma'$-Fe$_{4}$N Epitaxial Films on SrTiO$_{3}$(001) Grown by Molecular Beam Epitaxy

2012 ◽  
Vol 51 ◽  
pp. 068001 ◽  
Author(s):  
Keita Ito ◽  
Kazuki Kabara ◽  
Hirokazu Takahashi ◽  
Tatsunori Sanai ◽  
Kaoru Toko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Anisotropic Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document