Gallium phosphate, GaPO4: a new piezoelectric crystal material for high-temperature sensorics

1997 ◽  
Vol 61 (1-3) ◽  
pp. 361-363 ◽  
Author(s):  
P. Krempl ◽  
G. Schleinzer ◽  
W. Wallno¨fer
Keyword(s):  
High Temperature ◽  
Piezoelectric Crystal ◽  
Crystal Material ◽  
Gallium Phosphate

High performance piezoelectric crystal cut designed in LiNbO3 for high temperature acoustic emission sensing application

CrystEngComm ◽  
2022 ◽  
Author(s):  
guoliang wang ◽  
Linfang Xie ◽  
Chao Jiang ◽  
Xueliang Liu ◽  
Yanlu Li ◽  
...  
Keyword(s):  
Acoustic Emission ◽  
High Temperature ◽  
Lithium Niobate ◽  
Resonance Frequency ◽  
High Performance ◽  
Piezoelectric Crystal ◽  
Crystal Material ◽  
Acoustic Emission Sensing ◽  
Sensing Application

Lithium niobate (LiNbO3, LN) is a kind of multifunctional crystal material. In this study, an optimum piezoelectric crystal cut (XZt/28°) with central resonance frequency of 150 kHz and stable electro-elastic...

scholarly journals Effect of Electrode Configuration on High Temperature Thickness Shear Gallium Phosphate Transducer

Proceedings ◽  
2017 ◽  
Vol 1 (4) ◽  
pp. 381 ◽  
Author(s):  
Anurag Dhutti ◽  
Tat-Hean Gan ◽  
Abbas Mohimi ◽  
Wamadeva Balachandran ◽  
Jamil Kanfoud
Keyword(s):  
High Temperature ◽  
Electrode Configuration ◽  
Thickness Shear ◽  
Gallium Phosphate

Citrate sol–gel method to prepare nanoparticles of a piezoelectric crystal material: La3Nb0.5Ga5.5O14 at low temperature

2008 ◽  
Vol 459 (1-2) ◽  
pp. L1-L4 ◽  
Author(s):  
F.P. Yu ◽  
D.R. Yuan ◽  
X.L. Duan ◽  
L.M. Kong ◽  
X.Z. Shi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Sol Gel ◽  
Piezoelectric Crystal ◽  
Gel Method ◽  
Sol Gel Method ◽  
Crystal Material

Structure of Ion-Implanted Silicon After Electron Beam Annealing

1980 ◽  
Vol 38 ◽  
pp. 306-307
Author(s):  
P. J. Smith ◽  
J. M. Leas ◽  
A. T. Leighton
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Amorphous Layer ◽  
High Dose ◽  
Device Structure ◽  
Crystal Silicon ◽  
Crystal Material ◽  
Ion Implanted

High dose ion-implantation into single crystal silicon produces an amorphous layer which must be removed by high temperature annealing. Laser and electron beam annealing, which bring only the top surface of the silicon to a high temperature, can produce more perfect single crystal material than conventional thermal annealing while avoiding the disadvantages of heating the entire wafer. We have found that electron beam annealing of oxide- defined silicon devices can produce dislocation-free single crystal material from amorphous ion-implanted layers, but the results are strongly dependent on both the electron beam parameters and the initial device structure.

scholarly journals Glassy Microspheres for Energy Applications

Micromachines ◽  
2018 ◽  
Vol 9 (8) ◽  
pp. 379 ◽  
Author(s):  
Giancarlo Righini
Keyword(s):  
Solar Cells ◽  
High Temperature ◽  
Hydrogen Storage ◽  
Oil And Gas ◽  
Nuclear Fusion ◽  
Hollow Microspheres ◽  
Shale Oil ◽  
Gas Recovery ◽  
Energy Applications ◽  
Crystal Material

Microspheres made of glass, polymer, or crystal material have been largely used in many application areas, extending from paints to lubricants, to cosmetics, biomedicine, optics and photonics, just to mention a few. Here the focus is on the applications of glassy microspheres in the field of energy, namely covering issues related to their use in solar cells, in hydrogen storage, in nuclear fusion, but also as high-temperature insulators or proppants for shale oil and gas recovery. An overview is provided of the fabrication techniques of bulk and hollow microspheres, as well as of the excellent results made possible by the peculiar properties of microspheres. Considerations about their commercial relevance are also added.

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