Characterisation of silicon carbide and silicon nitride thin films and Si3N4/SiC multilayers

AbstractAn overview is given of methods for testing thin-film tensile specimens of either MEMS materials or surface coatings. MEMS specimens are deposited in a final shape and need only to be released for testing, while specimens of coating materials must be extracted. Very brief descriptions of the specimen designs, force application approaches, and strain measurements are given along with a limited number of references. Representative stress-strain curves for polysilicon, silicon nitride, silicon carbide, electroplated nickel and diffusion aluminide bond coating are presented. Results at high temperatures are presented for the latter two materials.

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Preparation of silicon carbide nitride thin films by sputtering of silicon nitride target

Applied Surface Science ◽

10.1016/s0169-4332(01)00010-1 ◽

2001 ◽

Vol 173 (3-4) ◽

pp. 313-317 ◽

Cited By ~ 17

Author(s):

Xiaofeng Peng ◽

Lixin Song ◽

Jia Meng ◽

Yuzhi Zhang ◽

Xingfang Hu

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Silicon Nitride

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Mechanical Testing of Free-Standing Thin Films

MRS Proceedings ◽

10.1557/proc-687-b10.6/p6.6 ◽

2001 ◽

Vol 687 ◽

Cited By ~ 1

Author(s):

W. N. Sharpe ◽

K. J. Hemker

Keyword(s):

Thin Film ◽

Thin Films ◽

Silicon Carbide ◽

Silicon Nitride ◽

Surface Coatings ◽

Free Standing ◽

Coating Materials ◽

Strain Measurements ◽

Bond Coating ◽

And Diffusion

AbstractAn overview is given of methods for testing thin-film tensile specimens of either MEMS materials or surface coatings. MEMS specimens are deposited in a final shape and need only to be released for testing, while specimens of coating materials must be extracted. Very brief descriptions of the specimen designs, force application approaches, and strain measurements are given along with a limited number of references. Representative stress-strain curves for polysilicon, silicon nitride, silicon carbide, electroplated nickel and diffusion aluminide bond coating are presented. Results at high temperatures are presented for the latter two materials.

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POSSIBILITY OF COMPOSITE SILICON NITRIDE + SILICON CARBIDE (Si3 N4SiC) POWDER PRODUCTION IN THERMAL PLASMA

High Temperature Material Processes (An International Quarterly of High-Technology Plasma Processes) ◽

10.1615/hightempmatproc.v15.i4.90 ◽

2011 ◽

Vol 15 (4) ◽

pp. 321-328 ◽

Cited By ~ 3

Author(s):

Zivota G. Kostic ◽

Predrag Lj. Stefanovic ◽

Pavle B. Pavlovic ◽

Dejan B. Cvetinovic

Keyword(s):

Silicon Carbide ◽

Silicon Nitride ◽

Thermal Plasma ◽

Powder Production ◽

Composite Silicon

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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

MRS Proceedings ◽

10.1557/proc-403-489 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 1

Author(s):

T. S. Hayes ◽

F. T. Ray ◽

K. P. Trumble ◽

E. P. Kvam

Keyword(s):

Thin Film ◽

Thin Films ◽

Silicon Carbide ◽

Ohmic Contacts ◽

Microstructure Development ◽

P Type ◽

Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

MRS Proceedings ◽

10.1557/proc-546-103 ◽

1998 ◽

Vol 546 ◽

Cited By ~ 7

Author(s):

V. Ziebartl ◽

O. Paul ◽

H. Baltes

Keyword(s):

Thin Films ◽

Finite Element ◽

Thermal Expansion ◽

Silicon Nitride ◽

Excellent Agreement ◽

Energy Minimization ◽

Coefficient Of Thermal Expansion ◽

Temperature Dependent ◽

Minimization Method ◽

Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

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